[29p-PB4-1~25] 15.6 IV-group-based compounds

[29p-PB4-2] ▲High resolution X-ray diffraction analysis of the crystal structure of heavily Al-doped 4H-SiC thick epilayer

^○（PC）Shiyang Ji¹, Kazutoshi Kojima¹, Yuuki Ishida¹, Tomohisa Kato¹, Sadafumi Yoshida¹, Hidekazu Tsuchida², Hajime Okumura¹ (Natl. Inst of Adv. Ind. Sci. and Tech. (AIST)¹, Central Res. Inst. of Electric Power Indust. (CRIEPI)²)

Keywords:p-type 4H-SiC、Chemical vapor deposition、Lattice parameter