[29p-PB4-1~25] 15.6 IV-group-based compounds

[29p-PB4-20] △C-V Characteristics of Si/4H-SiC Junctions by Using Surface-Activated Bonding

^○（B）Shota Nishida¹, Ｊｉａｎｂｏ Ｌｉａｎｇ¹, Tatuya Miyazaki¹, Masasi Morimoto¹, Naoki Shigekawa¹, Manabu Arai² (Osaka City Univ.¹, New Japan Radio Co., Ltd.²)

Keywords:SiC、表面活性化ボンディング法