[29p-PB4-1~25] 15.6 IV-group-based compounds

[29p-PB4-21] Optimization of implantation conditions on high-dose ion-implantation into 4 degrees off 4H-SiC epitaxial layer

^○Ken-ichi Yoshida¹, Shinji Nagamachi¹ (Ion Technology Center¹)

Keywords:炭化珪素、イオン注入