[29p-PB4-1~25] 15.6 IV-group-based compounds

[29p-PB4-6] Evaluation of interface state density in SiO2/SiC structure considered with interface-trapped charge

^○keiichi yamada¹, osamu ishiyama¹, atsushi simozato², junji senzaki^1,2, hirofumi matsuhata^1,2, makoto kitabatake¹ (R&D Partnership for Future Power Electronics Technology¹, AIST/ADPERC²)

Keywords:界面準位