[29p-PB4-1~25] 15.6 IV-group-based compounds

[29p-PB4-7] Reliability of gate oxides on 4H-SiC epitaxial surface planarized by CMP

^○Keiichi Yamada¹, Osamu Ishiyama¹, Kentarou Tamura¹, Tamotsu Yamashita¹, Atsushi Simozato², Tomohisa Kato^1,2, Junji Senzaki^1,2, Hirofumi Matsuhata^1,2, Makoto Kitabatake¹ (R&D Partnership for Future Power Electronics Technology¹, AIST/ADPERC²)

Keywords:信頼性