[29p-PB4-1~25] 15.6 IV-group-based compounds

[29p-PB4-9] The effect of thermal oxidation to stacking faults in 4H-SiC epitaxial layers

^○Yutaro Miyano¹, Hiroyuki Yaguchi¹, Yasuto Hijikata¹, Shuhei Yagi¹ (Saitama Univ.¹)

Keywords:炭化ケイ素