[30a-F2-1~10] 6.3 Oxide-based electronics

[30a-F2-1] Feasibility of Multilevel Cell in NOSRAM Using CAAC-IGZO TFT Technology

^○Hiroki Inoue¹, Takahiko Ishizu¹, Takanori Matsuzaki¹, Tatsuya Onuki¹, Tomoaki Atsumi¹, Yutaka Shionoiri¹, Kiyoshi Kato¹, Jun Koyama¹, Shunpei Yamazaki¹ (Semiconductor Energy Laboratory¹)

Keywords:酸化物半導体、CAAC、IGZO