[30a-F2-1~10] 6.3 Oxide-based electronics

[30a-F2-5] Fabrication of very small horizontal ReRAM by electric-field-induced oxidization method using atomic force microscope and switching characteristics

^○Kentaro Kinoshita^1,2, Takahiro Fukuhara¹, Satoru Kishida^1,2 (Tottori Univ.¹, Tottori Univ. Electronic Display Research Center²)

Keywords:ReRAM、AFM電界酸化法、雰囲気依存