Ar:Cl<sub>2</sub> mixture ratio study on Neutral Beam etching of GaAs

Cédric Thomas

Presentation information

Regular sessions(Oral presentation)

14. Semiconductors B (Exploratory Materials, Physical Properties, Devices) » 14.2 Ultrathin films and quantum nanostructures

[30a-G20-1~15] 14.2 Ultrathin films and quantum nanostructures

Sat. Mar 30, 2013 9:00 AM - 1:00 PM G20 (B5 4F-2404)

[30a-G20-6] Ar:Cl₂ mixture ratio study on Neutral Beam etching of GaAs

^○Cédric Thomas^1,3, Yosuke Tamura^1,3, Makoto Igarashi^1,3, Mohd Erman Fauzi^1,3, Akio Higo², Weiguo Hu^1,3, Tomohiro Kubota¹, Seiji Samukawa^1,2,3 (IFS, Tohoku Univ.¹, WPI-AIMR, Tohoku Univ.², JST-CREST³)

Keywords:GaAs、量子ドット、XPS

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Presentation information

[30a-G20-1~15] 14.2 Ultrathin films and quantum nanostructures

[30a-G20-6] Ar:Cl2 mixture ratio study on Neutral Beam etching of GaAs

[30a-G20-6] Ar:Cl₂ mixture ratio study on Neutral Beam etching of GaAs