[30a-G21-1~11] 15.4 III-V-group nitride crystals

[30a-G21-10] △Development of low tempearture fabrication process for nitride based LEDs

^○Eiji Nakamura¹, Kohei Ueno¹, Shigeru Inoue², Jitsuo Ohta², Hiroshi Fujioka^2,3, Masaharu Ohima¹ (Department of Appl. Chem., The Univ. of Tokyo¹, IIS, The Univ. of Tokyo², JST-CREST³)

Keywords:GaN、p型GaN、低温