Growth of AlN single-crystalline layer by UHV sputter epitaxy

Shota Hiruma

Presentation information

Regular sessions(Oral presentation)

15. Crystal Engineering » 15.4 III-V-group nitride crystals

[30a-G21-1~11] 15.4 III-V-group nitride crystals

Sat. Mar 30, 2013 9:00 AM - 12:00 PM G21 (B5 4F-2405)

[30a-G21-11] Growth of AlN single-crystalline layer by UHV sputter epitaxy

^○Shota Hiruma¹, Shunsuke Sasahara¹, Takanori Masuda¹, Shigeki Iijima¹, Shinya Nikaido¹, Takayoshi Hatori¹, Hiroyuki Shinoda¹, Nobuki Mutsukura¹ (Tokyo Denki Univ.¹)

Keywords:AlN

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