[30a-G21-1~11] 15.4 III-V-group nitride crystals

[30a-G21-4] Characterization of N-polar InGaN/GaN multiple quantum well structures

^○Eiji Kishikawa¹, Kouhei Ueno², Shigeru Inoue¹, Jitsuo Ohta¹, Hiroshi Fujioka^1,3 (IIS, The Univ. of Tokyo¹, Department of Appl. Chem., The Univ. of Tokyo², JST-CREST³)

Keywords:N極性、InGaN、MQW