The 60th JSAP Spring Meeting,2013

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Regular sessions(Oral presentation)

14. Semiconductors B (Exploratory Materials, Physical Properties, Devices) » 14.1 Physical properties of exploratory materials

[30a-G7-1~10] 14.1 Physical properties of exploratory materials

Sat. Mar 30, 2013 9:00 AM - 11:45 AM G7 (B5 2F-2201)

[30a-G7-9] Annealing Time Dependent Contact Resistance of TiSi2 Electrode for AlGaN/GaN structure

○Mari Okamoto1 (Tokyo Inst.1)

Keywords:AlGaN GaN TiSi2