The 60th JSAP Spring Meeting,2013

Presentation information

Regular sessions(Oral presentation)

15. Crystal Engineering » 15.1 Bulk crystal growth

[30p-G19-1~7] 15.1 Bulk crystal growth

Sat. Mar 30, 2013 1:00 PM - 2:45 PM G19 (B5 4F-2403)

[30p-G19-1] Reduction of carbon impurity in Si crystals grown by infrared convergent heating floating zone (IR-FZ) method

Satoshi Watauchi1,2, Kazuki Yanagimoto1, Masanori Nagao1, Isao Tanaka1, Takashi Watanabe3, Isamu Shindo3 (Univ. of Yamanashi1, PRESTO-JST2, Crystal System Corp.3)

Keywords:浮遊帯域溶融法、シリコン、結晶成長