[30p-G21-1~7] 15.4 III-V-group nitride crystals

[30p-G21-3] Spatio-time-resolved cathodoluminescence studies on freestanding GaN substrates grown by HVPE employing a front-excitation photoelectron gun

^○Youichi Ishikawa¹, Kentaro Furusawa¹, Masanori Tashiro¹, Kouji Hazu¹, Satoru Nagao², Hirotaka Ikeda², Kenji Fujito², Shigefusa Chichibu¹ (IMRAM Tohoku Univ.¹, Mitsubishi Chemical Corp.²)

Keywords:HVPE GaN基板