[30p-G21-6] △Carreir dynamics of the non-radiative recombination in InGaN/GaN SQW
Keywords:窒化物半導体、非輻射再結合
Regular sessions(Oral presentation)
15. Crystal Engineering » 15.4 III-V-group nitride crystals
Sat. Mar 30, 2013 1:15 PM - 3:00 PM G21 (B5 4F-2405)
Keywords:窒化物半導体、非輻射再結合