Process development for next generation DRAM electrode using a new Ru-CVD/ALD precursor

Presentation information

Regular sessions(Oral presentation)

13. Semiconductors A (Silicon) » 13.4 Interconnection technology

Sat. Mar 30, 2013 1:30 PM - 3:00 PM G6 (B5 1F-2106)

^○Taewoong Kim¹, Takeshi Momose¹, Yukihiro Shimogaki¹ (The Univ. of Tokyo¹)

Keywords:Atomic Layer Deposition、Ruthenium、reflectivity measurement