[17a-C5-1~10] 15.4 III-V-group nitride crystals

Wed. Sep 17, 2014 9:00 AM - 11:45 AM C5 (Open Hall)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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9:00 AM - 9:15 AM

[17a-C5-1] Growth of hexagonal boron nitride films by low-pressure CVD

^○Naoki Umehara¹, Atsushi Masuda¹, Takaki Shimizu², Tetsuya Kouno¹, Hiroko Kominami¹, Kazuhiko Hara^3,4 (Shizuoka Univ.¹, Shizuoka Univ.², Shizuoka Univ.³, Shizuoka Univ.⁴)

9:15 AM - 9:30 AM

[17a-C5-2] Evaluation of the influence of substrate in BGaN epitaxial growth

^○(M1)Kohei Ueyama¹, Katsuhiro Atsumi¹, Hidenori Mimura², Yoku Inoue¹, Toru Aoki², Takayuki Nakano¹ (Shizuoka Univ.¹, Res. Inst. Electronics, Shizuoka Univ.²)

9:30 AM - 9:45 AM

[17a-C5-3] Structural and mechanical characterization of BN films prepared by Reactive Plasma-Assisted Coating (RePAC)—Substrate bias voltage dependence—

^○Masao Noma¹, Michiru Yamashita², koji Eriguchi³, Shigehiko Hasegawa⁴ (SHINKO SEIKI. Co., LTD.¹, Hyogo Prefectural Institute of Technology², Kyoto University³, Osaka University⁴)

9:45 AM - 10:00 AM

[17a-C5-4] Electrical and Magnetic Properties of Fe Nitrides grown on GaN(0001)

Shota Yamauchi¹, Masaru Yoneoka¹, Hiroaki Yamaguchi¹, ^○Shigehiko Hasegawa¹ (Osaka Univ. ISIR-SANKEN¹)

10:00 AM - 10:15 AM

[17a-C5-5] Influence of mono-layer Graphene on growth process of GaN on mono-layer Graphene/SiO2-film/Si(001) substrate by ECR-MBE method (II)

^○Tokuo Yodo¹, Nan Yang¹, Tomoaki Ishikawa¹, Satoru Kaneko^3,2, Daishi Shiojiri², Akifumi Matsuda², Mamoru Yoshimoto² (Osaka Inst. of Tech.¹, Tokyo Inst. of Tech.², Kanagawa Ind. Tech. Center³)

Break 10:15～10:30 (10:15 AM - 10:30 AM)

10:30 AM - 10:45 AM

[17a-C5-6] Effect of in situ N2 micro plasma treatment on initial growth of GaN by MOMBE

^○Yohei Suzuki¹, Yasuhiro Kusakabe¹, Takahiro Maruyama¹, Shigeya Narituka¹, Kazuo Shimizu², Shogo Kaneda² (Meijo Univ.¹, Shizuoka Univ.²)

10:45 AM - 11:00 AM

△ [17a-C5-7] Controllability of ultra-thin GaN layer growth in AlN/GaN multi-layered structure grown by PAMBE

^○Mitsuaki Kaneko¹, Tsunenobu Kimoto¹, Jun Suda¹ (Kyoto Univ.¹)

11:00 AM - 11:15 AM

△ [17a-C5-8] Thinning of Regularly Arranged GaN Nanocolumns ～Realization of Nanocolumns with a diameter as narrow as 34 nm～

^○Tatsuya Kano^1,2, Takao Oto^1,2, Yutaro Mizuno^1,2, Jun Yoshida^1,2, Rin Miyagawa^1,2, Katsumi Kishino^1,2 (Sophia Univ.¹, Sophia Univ. Nanotech. Res. Center²)

11:15 AM - 11:30 AM

[17a-C5-9] Crystalline quality control of nitride nanocolumns on sputter-deposited AlN layer by pre-growth tuning

^○Daishi Fukushima¹, Hiroaki Hayashi¹, Yuta Konno¹, Katsumi Kishino^1,2 (Sophia Univ.¹, Sophia Nanotechnology²)

11:30 AM - 11:45 AM

[17a-C5-10] Flip-chip bonding of single crystalline nanocolumn arrays on sputter-deposited AlN/Si (111) to another carrier

^○Hiroaki Hayashi¹, Daisuke Tomimatsu¹, Daishi Fukushima¹, Tomohiro Noma¹, Ichirou Nomura¹, Katsumi Kishino^1,2 (Sophia university¹, Sophia nanotechnology research center²)

Session information

[17a-C5-1~10] 15.4 III-V-group nitride crystals

△ [17a-C5-7] Controllability of ultra-thin GaN layer growth in AlN/GaN multi-layered structure grown by PAMBE

△ [17a-C5-8] Thinning of Regularly Arranged GaN Nanocolumns ～Realization of Nanocolumns with a diameter as narrow as 34 nm～