The 75th JSAP Autumn Meeting, 2014

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Oral presentation

15. Crystal Engineering » 15.4 III-V-group nitride crystals

[17a-C5-1~10] 15.4 III-V-group nitride crystals

Wed. Sep 17, 2014 9:00 AM - 11:45 AM C5 (Open Hall)

9:15 AM - 9:30 AM

[17a-C5-2] Evaluation of the influence of substrate in BGaN epitaxial growth

○(M1)Kohei Ueyama1, Katsuhiro Atsumi1, Hidenori Mimura2, Yoku Inoue1, Toru Aoki2, Takayuki Nakano1 (Shizuoka Univ.1, Res. Inst. Electronics, Shizuoka Univ.2)

Keywords:BGaN,半導体,MOVPE