Oral presentation

14. Semiconductors B (Exploratory Materials, Physical Properties, Devices) » 14.5 Compound solar cells

[17p-A28-1~12] 14.5 Compound solar cells

Wed. Sep 17, 2014 2:00 PM - 5:15 PM A28 (N304)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

+Add all to schedule

2:00 PM - 2:15 PM

[17p-A28-1] [Young Scientist Oral Presentation Award Speech]（15min.）
Carrier Time-of-Flight Measurement for Direct Observation of Carrier Dynamics in Quantum Structure Solar Cells

^○Kasidit Toprasertpong¹, Naofumi Kasamatsu³, Hiromasa Fujii¹, Tomoyuki Kada³, Shigeo Asahi³, Yunpeng Wang², Kentaroh Watanabe², Masakazu Sugiyama¹, Takashi Kita³, Yoshiaki Nakano¹ (Univ. of Tokyo¹, RCAST², Kobe Univ.³)

2:15 PM - 2:30 PM

[17p-A28-2] Investigation of Miniband in Strain-Balanced InGaAs/GaAsP Quantum Well Solar Cells by Using a Piezoelectric Photothermal Method

^○(D)taketo aihara¹, takumi murakami¹, hironori kuradome¹, taishi sugimoto¹, hidetoshi suzuki¹, atsuhiko fukuyama¹, masakazu sugiyama², yoshiaki nakano², tetsuo ikari¹ (Univ. of Miyazaki¹, The Univ. of Tokyo²)

2:30 PM - 2:45 PM

△ [17p-A28-3] Multiple exciton generation in colloidal nanocrystal thin films: Surface ligand effects

^○Masashi Ono¹, Taishi Nishihara², Toshiyuki Ihara², Makoto Kikuchi¹, Atsushi Tanaka¹, Masayuki Suzuki¹, Yoshihiko Kanemitsu^2,3 (FUJIFILM¹, ICR, Kyoto Univ.², JST-CREST³)

2:45 PM - 3:00 PM

[17p-A28-4] Multiple exciton generation in colloidal nanocrystal thin films: Multiexciton dynamics and charge separation

^○Taishi Nishihara¹, Masashi Ono², Hirokazu Tahara¹, Yoshihiko Kanemitsu^1,3 (ICR, Kyoto Univ¹, FUJIFILM Corporation, Frontier Core-Technology Laboratories², JST-CREST³)

3:00 PM - 3:15 PM

▼ [17p-A28-5] Analysis of voltage dependence of two-step photocurrent generation in GaAs/AlGaAs quantum dot solar cells using rate equations

^〇Martin Elborg¹, Takeshi Noda¹, Takaaki Mano¹, Kazuaki Sakoda^1,2, Liyuan Han¹ (NIMS¹, Univ. Tsukuba²)

3:15 PM - 3:30 PM

△ [17p-A28-6] The Effect of Si doping in quantum dot solar cells

^○(D)Shunya Naitoh^1,2, Kasidit Toprasertpong¹, Takuya Hoshii^1,2, Masakazu Sugiyama¹, Yoshitaka Okada^1,2 (The Univ. of Tokyo¹, RCAST²)

Break 15:30～15:45 (3:30 PM - 3:45 PM)

3:45 PM - 4:00 PM

△ [17p-A28-7] Observation of photocurrent increase due to two-step photon absorption process in a single quantum dot for intermediate band solar cell

^○Tomohiro Nozawa^1,2,3, Hiroyuki Takagi^1,2, Katsuyuki Watanabe¹, Yasuhiko Arakawa^1,2 (Nano Quine¹, IIS Univ. of Tokyo², SHARP³)

4:00 PM - 4:15 PM

△ [17p-A28-8] Two-Step Photon Absorption in InGaAs Quantum Dot Solar Cells Varying Barrier Layers

^○Ryo Tamaki¹, Yasushi Shoji¹, Yoshitaka Okada¹, Kenjiro Miyano¹ (RCAST, The Univ. of Tokyo¹)

4:15 PM - 4:30 PM

△ [17p-A28-9] Effect of carrier relaxation to the quantized states in InAs/GaAs quantum dot superlattice solar cell on the two-step photon absorption

^○Tomoyuki Kada¹, Shigeo Asahi¹, Toshiyuki Kaizu¹, Takashi Kita¹, Ryo Tamaki², Yoshitaka Okada², Kenjiro Miyano² (Kobe Univ.¹, RCAST, The Univ. of Tokyo²)

4:30 PM - 4:45 PM

[17p-A28-10] Efficient two-step photon absorption at room temperature by inserting high-potential-barrier layers in intermediate-band solar cells

^○Shigeo Asahi¹, Haruyuki Teranishi¹, Naofumi Kasamatsu¹, Tomoyuki Kada¹, Toshiyuki Kaizu¹, Takashi Kita¹ (Kobe Univ.¹)

4:45 PM - 5:00 PM

[17p-A28-11] Theoretical calculation of sun concentration properties for intermediate-band solar cells using InAs/GaAsSb quantum dots

^○Keisuke Uchida¹, Katsuyoshi Sakamoto¹, Koichi Yamaguchi¹ (Univ. of Electro-Communications¹)

5:00 PM - 5:15 PM

[17p-A28-12] Hot carrier intermediate band solar cells using low-dimensioned quantum structures

^○Daiki Watanabe¹, Naofumi Kasamatsu¹, Yukihiro Harada¹, Takashi Kita¹ (Kobe Univ.¹)