[17p-C6-1~10] 3.13 Semiconductor optical devices

Wed. Sep 17, 2014 2:00 PM - 4:45 PM C6 (C212)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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Lunch 12:30～14:00 (12:30 PM - 2:00 PM)

2:00 PM - 2:15 PM

[17p-C6-1] Low-voltage-operation Ga2O3:Sn/c-Se heterojunction photodiode

^○Shigeyuki Imura¹, Kenji Kikuchi¹, Kazunori Miyakawa¹, Hiroshi Ohtake¹, Misao Kubota¹ (NHK STRL¹)

2:15 PM - 2:30 PM

[17p-C6-2] Development of high-sensitivity SOI photodiode by high-density arrangement of gold nanoparticles

^○Atsushi Ono^1,2, Yasushi Enomoto³, Yasufumi Matsumura³, Hiroaki Satoh^1,2, Hiroshi Inokawa^1,2 (RIE, Shizuoka Univ.¹, Shizuoka Univ.², NSSC³)

2:30 PM - 2:45 PM

[17p-C6-3] Spectroscopic Sensitivity of SOI Photodiode with Hole-Array-Type Metal Grating for Oblique Incident Light

^○Hiroaki Satoh^1,2, Shohei Iwata², Atsushi Ono^1,2, Hiroshi Inokawa^1,2 (Shizuoka Univ.¹, Shizuoka Univ.²)

2:45 PM - 3:00 PM

▲ [17p-C6-4] Dark current reduction of waveguide InGaAs MSM photodetector on III-V CMOS photonics platform by InAlAs cap layer

^○(DC)Yongpeng Cheng¹, Yuki Ikku¹, Mitsuru Takenaka¹, Shinichi Takagi¹ (Univ. Tokyo¹)

3:00 PM - 3:15 PM

[17p-C6-5] Development pf 4.3um Light-Emitting-Diode

^○Akimasa Tanaka¹, Daisuke Iida¹, Asuka Mishima¹ (Hamamatsu¹)

Break 15:15～15:30 (3:15 PM - 3:30 PM)

3:30 PM - 3:45 PM

[17p-C6-6] Supression of surface oxidation on InAs/GaSb superlattice by nitrogen plasma treatment

^○Yukihiro Tsuji¹, Hiroshi Inada¹, Kenichi Machinaga¹, Sundararajan Balasekaran¹, Kouhei Miura¹, Yashuhiro Iguchi¹, Tsukuru Katsuyama¹, Haruyoshi Katayama², Masafumi Kimata³ (Sumitomo Electric Industries, Ltd.¹, Japan Aerospace Exploration Agency², Ritsumeikan Univ.³)

3:45 PM - 4:00 PM

▲ [17p-C6-7] Effect of surface pretreatments on the performance of InAs/GaSb superlattice MWIR photodiodes.

^〇Sundararajan Balasekaran, Hiroshi Inada, Kouhei Miura, Yukihiro Tsuji, Ken-ichi Machinaga, Masaki Migita, Yasuhiro Iguchi, Tsukuru Tsukuru Katsuyama (Sumitomo Electric Industries, LTD)

4:00 PM - 4:15 PM

[17p-C6-8] Development of 10um Photodiode

^○Akimasa Tanaka¹, Asuka Mishima¹, Yoshinori Osimura¹ (Hamamatsu¹)

4:15 PM - 4:30 PM

[17p-C6-9] Charge Sensitive Infrared Phototransistors (CSIPs) for Far-Infrared Wavelengths

^○(D)Ryota Nihei^1,2, Susumu Komiyama^3,4, Takashi Satoh⁵, Mitsunobu Kawada², Yasuo Doi³, Syuji Matsuura², Takao Nakagawa^1,2 (Univ. of Tokyo¹, ISAS/JAXA², Univ. of Tokyo³, NICT⁴, Univ. of Tokyo⁵)

4:30 PM - 4:45 PM

[17p-C6-10] Improvement of Quantum Efficiency in Charge-Sensitive Infrared Phototransistors (CSIP）

^○Sunmi Kim¹, Susumu Komiyama^2,3, Takashi Satoh¹, Mikhail Patrashin³, Yusuke Kajihara¹ (IIS, Univ. of Tokyo¹, Dept. Basic Sci., Univ. of Tokyo², NICT³)

Session information

[17p-C6-1~10] 3.13 Semiconductor optical devices

▲ [17p-C6-4] Dark current reduction of waveguide InGaAs MSM photodetector on III-V CMOS photonics platform by InAlAs cap layer

▲ [17p-C6-7] Effect of surface pretreatments on the performance of InAs/GaSb superlattice MWIR photodiodes.