[18a-A17-1~13] 15.6 IV-group-based compounds

Thu. Sep 18, 2014 9:00 AM - 12:30 PM A17 (E308)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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9:00 AM - 9:15 AM

[18a-A17-1] [JSAP Young Scientist Award Speech]（15min.）
Improvement of Carrier Lifetimes in Highly Al-Doped p-Type 4H-SiC Epitaxial Layers by Hydrogen Passivation

^○Takafumi Okuda (Kyoto University)

9:15 AM - 9:30 AM

[18a-A17-2] Search of Defect Centers Acting as Single Photon Source in Silicon Carbide

^○Takeshi Ohshima¹, Shinobu Onoda¹, Takahiro Makino¹, Naoya Iwamoto¹, Brett Johnson², Alex Lohrmann², T Karle², Jeffrey McCallum², Stefania Castelletto³, Takahide Umeda⁴, Yoshihiro Sato⁴, Yuwei Zhu⁴, V Ivady⁵, Adam Gali⁵, Moriyoshi Haruyama^1,6, Wataru Kada⁶, Osamu Hanaizumi⁶ (JAEA¹, Univ. Melbourne², RMIT Univ.³, Univ. Tsukuba⁴)

9:30 AM - 9:45 AM

▲ [18a-A17-3] Evaluation of stacking faults in 4H-SiC single crystal by using KOH etching on non-polar {1-100} face and cathodoluminescence

^○Yongzhao Yao¹, Yukari Ishikawa¹, Yoshihiro Sugawara¹, Koji Sato¹, Takayuki Shirai², Katsunori Danno², Hidemitsu Sakamoto², Kazuaki Sato², Takeshi Bessho², Benjamin Dierre³, Kentaro Watanabe³, Takashi Sekiguchi³ (JFCC¹, Toyota Motor Corporation², NIMS³)

9:45 AM - 10:00 AM

[18a-A17-4] Analysis of screw dislocation in 4H-SiC by molecular dynamics

^○(M2)Mitsutoshi Mizutani¹, Takahiro Kawamura¹, Yasuyuki Suzuki¹, Yoshihiro Kangawa², Koichi Kakimoto² (Mie Univ.¹, RIAM, Kyushu Univ.²)

10:00 AM - 10:15 AM

[18a-A17-5] Observation of pair structure of threading dislocation and nano-groove in 4H-SiC wafer by mirror projection electron microscopy

^○Toshiyuki Isshiki¹, Masaki Hasegawa² (Kyoto Inst. Tech.¹, Hitachi, Central Research Lab.²)

10:15 AM - 10:30 AM

[18a-A17-6] Partial Dislocation Motion in 4H-SiC Associated with Stacking Fault Expansion and Contraction

^○Yoshifumi Yamashita¹, Takuya Shimomura¹, Takeshi Nishikawa¹, Yasuhiko Hayashi¹ (Okayama Univ.¹)

10:30 AM - 10:45 AM

[18a-A17-7] Characterization of stacking faults in 4H-SiC epilayers by X-ray topography

^○Kengo Noami¹, Tetsuya Nagai¹, Katsuhiko Nakai¹, Toshiro Futagi¹ (NSST¹)

Break 10:45～11:00 (10:45 AM - 11:00 AM)

11:00 AM - 11:15 AM

[18a-A17-8] Spectral response of SiC photoelectrodes

^○Masashi Kato¹, Keiko Miyake¹, Masaya Ichimura¹ (Nagoya Inst. of Tech.¹)

11:15 AM - 11:30 AM

[18a-A17-9] Defect characterization for p-type SiC epilayers toward photoelectrode application

^○Masashi Kato¹, Yoshitaka Nakano² (Nagoya Inst. of Tech.¹, Chubu Univ.²)

11:30 AM - 11:45 AM

[18a-A17-10] An ab initio analysis on elementary process in water-splitting reaction at 3C-SiC surface

^○Kazuhiro Shinn-ike¹, Kenji Tsuruta¹, Atsushi Ishikawa¹ (Okayama Univ.¹)

11:45 AM - 12:00 PM

△ [18a-A17-11] p-type 3C-SiC photo-electrodes for stable and high efficient water splitting

^○Shunnosuke Akabane¹, Jun Tae Song¹, Renato Goes Amici¹, Keiko Miyake², Masashi Kato², Takayuki Iwasaki¹, Mutsuko Hatano¹ (Tokyo tech¹, Tokyo Inst. of Tech²)

12:00 PM - 12:15 PM

▼ [18a-A17-12] Photoelectrochemical CO₂ reduction on 3C-SiC photo-anode

^〇Jun Tae Song, Shunnosuke Akabane, Renato Goes Amici, Takayuki Iwasaki, Mutsuko Hatano (Tokyo Inst. of Tech.)

12:15 PM - 12:30 PM

[18a-A17-13] Study on light irradiation effect in the anodic process of SiC

^○(M1)Kimitaka Hidaka¹, Kazuki Watari¹, Motoaki Iwaya¹, Satoshi Kamiyama¹, Isamu Akasaki^1,2 (Meijo Univ.¹, Akasaki Research Center Nagoya Univ.²)