[18p-A17-1~12] 15.6 IV-group-based compounds

Thu. Sep 18, 2014 2:00 PM - 5:15 PM A17 (E308)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

+Add all to schedule

Lunch 12:30～14:00 (12:30 PM - 2:00 PM)

2:00 PM - 2:15 PM

[18p-A17-1] Interface reaction analysis of La2O3/SiN upon SiC substrate by ATR-FTIR

^○Yiming Lei¹, Shu Munekiyo¹, Kuniyuki Kakushima², Takamasa Kawanago², Yoshinori Kataoka², Akira Nishiyama², Nobuyuki Sugii², Hitoshi Wakabayash², Kazuo Tsutsui², Satoshi Yamakawa³, Hiroshi Iwai¹, Masayuki Huruhashi³, Naruhisa Miura³, Kenji Natori¹ (Tokyo Tech. FRC¹, Tokyo Tech. IGSSE², Mitsubishi Electric Corp.³)

2:15 PM - 2:30 PM

[18p-A17-2] Electronic States at Ultrathin SiO₂/SiC Interface measured by Total Photoelectron Yield Spectroscopy

^○Akio Ohta¹, Daichi Takeuchi², Truyen Nguyen Xuan², Katsunori Makihara², Seiichi Miyazaki² (Nagoya Univ. VBL¹, Nagoya Univ.²)

2:30 PM - 2:45 PM

[18p-A17-3] Theoretical Investigation for Initial Oxidation Processes on SiC Surfaces

^○Ayako Ito¹, Toru Akiyama¹, Kohji Nakamura¹, Tomonori Ito¹, Kenji Shiraishi², Hiroyuki Kageshima³, Masashi Uematsu⁴ (Mie Univ.¹, Nagoya Univ.², Shimane Univ.³, Keio Univ.⁴)

2:45 PM - 3:00 PM

[18p-A17-4] Nitrogen doping level in nitrided 4H-SiC MOS structures studied by electron spin resonance

^○Takahide Umeda¹, Yoshihiro Sato¹, Yuuki Sakuma², Ryouji Kosugi² (Univ. of Tsukuba¹, AIST²)

3:00 PM - 3:15 PM

△ [18p-A17-5] Role of water molecules in thermal oxidation of 4H-SiC(0001) substrates

^○Daisuke Nagai¹, Takuji Hosoi¹, Takayoshi Shimura¹, Heiji Watanabe¹ (Osaka Univ.¹)

3:15 PM - 3:30 PM

△ [18p-A17-6] Cathodoluminescence study of thermally-grown SiO₂ /SiC structures

^○Yuta Fukushima¹, Furkan Alan¹, Naoki Higuchi¹, Atthawut Chanthaphan¹, Takuji Hosoi¹, Takayoshi Shimura¹, Heiji Watanabe¹ (Osaka Univ.¹)

3:30 PM - 3:45 PM

△ [18p-A17-7] DLTS Study of SiC-MOSFET Interface Traps Following Oxidation After Nitridation

^○Junichi Hasegawa¹, Takeru Suto¹, Takayuki Iwasaki¹, Tetsuo Kodera¹, Masayuki Furuhashi², Munetaka Noguchi², Shuhei Nakata², Tadashi Nishimura¹, Mutsuko Hatano¹ (Tokyo Tech Univ.¹, Mitsubishi Electric Corp.²)

Break 15:45～16:00 (3:45 PM - 4:00 PM)

4:00 PM - 4:15 PM

[18p-A17-8] Room Temperature Process for Producing Silicon Carbide Thin Film on Silicon Surface

Azumi Hirooka¹, Kohei Shioda¹, Masaki Tsuji¹, ^○Hitoshi Habuka¹ (Yokohama National Univ.¹)

4:15 PM - 4:30 PM

[18p-A17-9] Room Temperature Process for Producing Silicon Carbide Thin Film on Aluminium Surface

^○Asumi Hirooka¹, Kohei Shioda¹, Masaki Tsuji¹, Hitoshi Habuka¹ (Yokohama National Univ.¹)

4:30 PM - 4:45 PM

[18p-A17-10] ClF3 Resistant Film Production Method (2)

^○Hitomi Matsuda¹, Hitoshi Habuka¹, Yuuki Ishida¹, Toshiyuki Ohno¹ (Yokohama National Univ.¹)

4:45 PM - 5:00 PM

[18p-A17-11] Erching Rate Behavior of SiC Wafer Using ClF₃ Gas

^○Ken Nakagomi¹, Dairi Yajima¹, Hitoshi Habuka¹, Tomohisa Kato² (Yokohama National Univ.¹, AIST²)

5:00 PM - 5:15 PM

[18p-A17-12] SiC Epitaxial Reactor Cleaning Method Using Chlorine Trifluoride Gas (2)

^○Kosuke Mizuno¹, Yusuke Fukumoto¹, Hitoshi Habuka¹, Yuuki Ishida², Toshiyuki Ohno³ (Yokohama National University¹, AIST², FUPET³)