Oral presentation

03. Optics and Photonics » 3.13 Semiconductor optical devices

[18p-C6-1~17] 3.13 Semiconductor optical devices

Thu. Sep 18, 2014 1:30 PM - 6:00 PM C6 (C212)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

+Add all to schedule

Lunch 12:00～13:30 (12:00 PM - 1:30 PM)

1:30 PM - 1:45 PM

[18p-C6-1] [Young Scientist Oral Presentation Award Speech]（15min.）
Realization of GaAs_1-xBi_x laser diodes with low temperature dependence of oscillation wavelength

^○Takuma Fuyuki¹, Kenji Yoshida¹, Ryo Yoshioka¹, Masahiro Yoshimoto¹ (Kyoto Inst. Tech.¹)

1:45 PM - 2:00 PM

[18p-C6-2] Wave functions after applying the electric field of electrons and holes in the MBE growth of AlGaAs/AlAs type II quantum wells

^○Takatoshi Nomura¹, Satoshi Shimomura¹, Fumitaro Ishikawa¹, Tadashi Fukuzawa², Sho Shirakata¹, Hisao Kondoh¹ (Ehime Univ.¹, JST²)

2:00 PM - 2:15 PM

[18p-C6-3] Band profile of AlGaAs distributed Bragg reflector with sinusoidal compositional structure.

^○Naoki Manabe¹, Teruyoshi Matsuda¹, Fumitaro Ishikawa¹, Satoshi Shimomura¹ (Ehime Univ.¹)

2:15 PM - 2:30 PM

[18p-C6-4] Numerical simulation of the AlAs selective oxidation characteristics using intermixing method

^○Che Wei¹, Tomoyuki Miyamoto¹ (Tokyo Tech, P&I Lab¹)

2:30 PM - 2:45 PM

△ [18p-C6-5] Basic study on Ion Implanted Quantum Well Intermixing for Optical Confinement of VCSEL

^○(M2)Asako Kikuchi¹, Tomoyuki Miyamoto¹ (Tokyo Ins. of Tech.¹)

2:45 PM - 3:00 PM

[18p-C6-6] Fundamental study of high gain VCSEL using excited states

^○Ken Tsunoda¹, Akihiro Matsutani², Tomoyuki Miyamoto¹ (Tokyo Tech P&I Lab¹, Tokyo Tech Tech Dep²)

3:00 PM - 3:15 PM

[18p-C6-7] Ridge-Type Semiconductor Laser with Partially Formed Insulating Cladding Layer

^○(M2)Mitsunori Oshima¹, Takahiro Numai¹ (Grad. School of Sci. & Eng., Ritsumeikan Univ.¹)

3:15 PM - 3:30 PM

[18p-C6-8] Ridge-Type Semiconductor Laser with the Transversal Diffraction Gratings and Partially Formed Insulating Cladding Layer ―Dependence on the Thickness of the Insulating Cladding Layer―

^○Takuya Hirasaki¹, Takahiro Numai¹ (Ritsumei Univ.¹)

3:30 PM - 3:45 PM

[18p-C6-9] Optical characteristic of GaAs/GaAsBi quantum well on (411)A GaAs substrate

^○Nobutaka Nishii¹, Koichiro Higaki¹, Takamasa Tatebe¹, Yu Nabara¹, Patil Pallavi¹, Fumitaro Ishikawa¹, Satoshi Shimomura¹ (Ehime Univ.¹)

Break 15:45～16:00 (3:45 PM - 4:00 PM)

4:00 PM - 4:15 PM

△ [18p-C6-10] 25-Gb/s operation of InGaAs MQW metamorphic laser on GaAs substrate

^○Ryo Nakao¹, Masakazu Arai¹, Wataru Kobayashi¹, Masaki Kohtoku¹ (NTT Photonics Lab.¹)

4:15 PM - 4:30 PM

△ [18p-C6-11] Low-threshold-current Operation of GaInAsP/InP Membrane-DFB Laser

^○Yuki Atsuji¹, Kyohei Doi¹, Jieun Lee¹, Yuki Atsumi¹, Takuo Hiratani¹, Daisuke Inoue¹, Tomohiro Amemiya², Nobuhiko Nishiyama¹, Shigehisa Arai^1,2 (Tokyo Tech¹, QNERC²)

4:30 PM - 4:45 PM

[18p-C6-12] Four-wavelength Stimulated Emission from 1.3-um External-Cavity Quantum-Dot Laser

^○Nami Yasuoka¹, Mitsuru Ishida², Kan Takada², Masaomi Yamaguchi², Tsuyoshi Yamamoto², Yasuhiko Arakawa¹ (Univ. of Tokyo¹, Fujitsu Labs.²)

4:45 PM - 5:00 PM

▲ [18p-C6-13] Measurement of Temperature Dependence of Threshold Current in InAs/GaAs Quantum Dot Lasers with p-Type Doping

^〇Timothy Rae, Katsuaki Tanabe, Satoshi Iwamoto, Yasuhiko Arakawa (NanoQuine, IIS, Univ. Tokyo)

5:00 PM - 5:15 PM

△ [18p-C6-14] Ultra-broadband near-infrared light source using excited state emissions of multiple InAs quantum dots

^○(M2)Takuma Yasuda¹, Hiroshi Shibata¹, Shunsuke Ohkouchi², Naoki Ikeda³, Hirotaka Ohsato³, Eiichirou Watanabe³, Richard Hogg⁴, Nobuhiko Ozaki¹ (Wakayama Univ.¹, NEC Corp.², NIMS³, Univ. Sheffield⁴)

5:15 PM - 5:30 PM

[18p-C6-15] Measurement method of oscillation wavelength for wideband QD laser

^○Katsumi Yoshizawa¹, Yoshinori Sawado¹, Kouichi Akahane², Naokatsu Yamamoto² (PioneerMTC¹, NICT²)

5:30 PM - 5:45 PM

[18p-C6-16] Low power consumption mid-IR single-mode quantum cascade laser

^○Hiroyuki Yoshinaga¹, Hiroki Mori¹, Jun-ichi Hashimoto¹, Yukihiro Tsuji¹, Makoto Murata¹, Toshiyuki Tanahashi¹, Tsukuru katsuyama¹ (Sumitomo Electric Industries, LTD.¹)

5:45 PM - 6:00 PM

[18p-C6-17] Development of the smallest rocket in the world.

^○Toshihisa Tsukada¹ (Cube I T Ltd.¹)