Oral presentation

06. Thin Films and Surfaces » 6.3 Oxide-based electronics

[19p-A10-1~22] 6.3 Oxide-based electronics

Fri. Sep 19, 2014 1:15 PM - 7:00 PM A10 (E214)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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Lunch 11:45～13:15 (11:45 AM - 1:15 PM)

1:15 PM - 1:30 PM

△ [19p-A10-1] Catalytic activities of perovskite-Mn oxide thin film for oxygen-reduction reaction

^○ryo kurosaki¹, daisuke kan¹, jun oyama², yuki orikasa², yoshiharu utimoto², yuichi shimakawa^1,3 (ICR, Kyoto Univ.¹, GSHES, Kyoto Univ.², JST-CREST³)

1:30 PM - 1:45 PM

△ [19p-A10-2] Reversible switching of superconducting-insulating states in LiTi₂O₄ using Li intercalation

^○Mifuyu Niwa¹, Kohei Yoshimatsu¹, Takayoshi Oshima¹, Akira Ohtomo^1,2 (Tokyo Tech¹, MCES²)

1:45 PM - 2:00 PM

△ [19p-A10-3] Electrostatic carrier doping on Cuprate infinite layer superconductor

^○(M2)Fumio Kiyokawa¹, Shogo Hayashi¹, Kazunori Ueno¹ (Tokyo Univ.Dept.Basic Science¹)

2:00 PM - 2:15 PM

△ [19p-A10-4] Metal-Insulator Transition by Carrier Doping into Sr₂IrO₄ Thin Films

^○Masato Ito^1,2, Masaki Uchida³, Yusuke Kozuka³, Kei Takahashi², Masashi Kawasaki^2,3 (IMR, Tohoku Univ.¹, CEMS, RIKEN², Univ. of Tokyo³)

2:15 PM - 2:30 PM

△ [19p-A10-5] Crystal Orientation Dependent Type of Charge Carriers in IrO₂

^○Masaki Uchida¹, Kei Takahashi², Yusuke Kozuka¹, Yoshinori Tokura^1,2, Masashi Kawasaki^1,2 (Dept. of Appl. Phys., the Univ. of Tokyo¹, CEMS, RIKEN²)

2:30 PM - 2:45 PM

[19p-A10-6] Thin Film Growth of IrO₂

^○Xiuyi Hou¹, Ryota Takahashi¹, Mikk Lippmaa¹ (ISSP, The Univ. of Tokyo¹)

2:45 PM - 3:00 PM

△ [19p-A10-7] Manipulation of Magnetic Domain Boundary and Interfacial Transport in Pyrochlore Iridate Heterostructure

^○Takahiro Fujita¹, Wataru Sano¹, Masaki Uchida¹, Yusuke Kozuka¹, Atsushi Tukazaki^2,3, Taka-hisa Arima^4,5, Masashi Kawasaki^1,5 (Dept. Appl. Phys., the Univ. of Tokyo¹, IMR, Tohoku Univ.², JST-PRESTO³, Dept. Adv. Mater. Sci., the Univ. of Tokyo⁴, CEMS, RIKEN⁵)

3:00 PM - 3:15 PM

△ [19p-A10-8] Tuning frustrated magnetism via tailoring ZnFe₂O₄/ZnCr₂O₄ superlattices

^○Tomoki Murata¹, Masaki Uchida¹, Yusuke Kozuka¹, Masashi Kawasaki^1,2 (Dept. of Appl. Phys., the Univ. of Tokyo¹, CEMS, RIKEN²)

3:15 PM - 3:30 PM

△ [19p-A10-9] Atomic-scale study of structural/electronic properties on a La_0.7Ca_0.3MnO₃ surface

^○Ryota Shimizu¹, Katsuya Iwaya², Takeo Ohsawa³, Shunya Nakamura⁴, Yasunobu Ando⁴, Emi Minamitani⁴, Satoshi Watanabe⁴, Taro Hitosugi^1,5 (Tohoku Univ.¹, RIKEN², NIMS³, Univ. Tokyo⁴, JST-PRESTO⁵)

3:30 PM - 3:45 PM

[19p-A10-10] First-principles calculation of structural/electronic properties on a La_0.75Ca_0.25MnO₃ surface

^○Shunya Nakamura¹, Yasunobu Ando¹, Emi Minamitani¹, Ryota Shimizu², Katsuya Iwaya³, Takeo Ohsawa⁴, Taro Hitosugi^2,5, Satoshi Watanabe¹ (Univ. Tokyo¹, Tohoku Univ.², Riken³, NIMS⁴, JST-PRESTO⁵)

3:45 PM - 4:00 PM

△ [19p-A10-11] Topological Hall effect in EuO thin films

^○Yuki Ohuchi¹, Masaki Uchida¹, Yusuke Kozuka¹, Kazunori Ueno^2,3, Atsushi Tsukazaki^2,4, Masashi Kawasaki^1,5 (Dept. of Applied Physics, the Univ. of Tokyo¹, Dept. of Basic Science, the Univ. of Tokyo², IMR, Tohoku Univ.³, JST-PRESTO⁴, CEMS, RIKEN⁵)

4:00 PM - 4:15 PM

△ [19p-A10-12] Oxygen octahedral tilt propagation in oxide heterostructures

^○Riko Sato¹, Daisuke Kan¹, Ryotaro Aso¹, Hiroki Kurata^1,2, Yuichi Shimakawa^1,2 (ICR, Kyoto Univ.¹, JST-CREST²)

Break 16:15～16:30 (4:15 PM - 4:30 PM)

4:30 PM - 4:45 PM

△ [19p-A10-13] Control of the transition temperature of VO2 films by external-stress impression

^○Shyun Ando¹, Junjun Jia¹, Masaaki Imura², Toshimasa Kanai², Yuzo Shigesato¹ (Aoyama Gakuin Univ.¹, Nippon Electric Glass Co., Ltd.²)

4:45 PM - 5:00 PM

△ [19p-A10-14] Temperature dependence of thermal conductivity of VO₂ thin films across Metal-Insulator Transition

^○Hinako Kizuka¹, Takashi Yagi², Yuichiro Yamashita², Junjun Jia¹, Shinichi Nakamura¹, Naoyuki Taketoshi², Yuzo Shigesato¹ (Aoyama Gakuin Univ.¹, AIST²)

5:00 PM - 5:15 PM

[19p-A10-15] Evaluation of Non-Locality in Metal-to-Insulator Transition Using VO₂/W:VO₂ Heterostructures

^○Takeaki Yajima¹, Tomonori Nishimura¹, Akira Toriumi¹ (Univ. of Tokyo¹)

5:15 PM - 5:30 PM

[19p-A10-16] Maximization of conductive modulation by Electro-chemical ion doping into VO₂ nanowires using side gate-type FET structures and Evaluation of the dopant diffusion length

^○(M2)Tsubasa Sasaki¹, Teruo Kanki¹, Hidekazu Tanaka¹ (ISIR, Osaka Univ.¹)

5:30 PM - 5:45 PM

[19p-A10-17] Reversible control of metal-insulator transition by local Peltier effect in VO₂ nanowires

Hidefumi Takami¹, ^○Teruo Kanki¹, Hidekazu Tanaka¹ (Osaka Univ.¹)

5:45 PM - 6:00 PM

[19p-A10-18] Evaluation of transport properties of VO₂ nanowires using a scanning probe microscope

^○(M1)Kotaro Sakai¹, Azusa Hattori¹, Teruo Kanki¹, hidekazu Tanaka¹ (ISIR, Osaka Univ.¹)

6:00 PM - 6:15 PM

[19p-A10-19] Correlation between TCR and thermal hysteresis width in doped VO2 films.

^○Kenichi Miyazaki¹, Shibuya Keisuke², Suzuki Megumi¹, Iwaki Takao¹, Wado Hiroyuki¹, Fujita Jun-ichi³, Sawa Akihito² (DENSO research lab.¹, AIST², Univ.Tsukuba³)

6:15 PM - 6:30 PM

[19p-A10-20] Growth of VO2 thin films on conductive TiN layer and out-of-plane IMT characteristics

^○Suruz Md.¹, Okimura Kunio¹ (Tokai Univ.¹)

6:30 PM - 6:45 PM

[19p-A10-21] The effect of substrate biasing on growth of vanadium dioxide thin film by reactive sputtering

^○Kui Su¹, BintiAzhan NurulHanis¹, Kunio Okimura¹ (Tokai Univ.¹)

6:45 PM - 7:00 PM

[19p-A10-22] Selective growth of Wadsley phase V₆O₁₃ and VO₂(B) thin films on metal and Si substrate

^○BintiAzhan NurulHanis¹, Kunio Okimura¹ (Tokai Univ.¹)

Session information

[19p-A10-1~22] 6.3 Oxide-based electronics

△ [19p-A10-1] Catalytic activities of perovskite-Mn oxide thin film for oxygen-reduction reaction

△ [19p-A10-2] Reversible switching of superconducting-insulating states in LiTi2O4 using Li intercalation

△ [19p-A10-3] Electrostatic carrier doping on Cuprate infinite layer superconductor

△ [19p-A10-4] Metal-Insulator Transition by Carrier Doping into Sr2IrO4 Thin Films

△ [19p-A10-5] Crystal Orientation Dependent Type of Charge Carriers in IrO2