[20a-C5-1~12] 15.4 III-V-group nitride crystals

Sat. Sep 20, 2014 8:30 AM - 12:00 PM C5 (Open Hall)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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8:30 AM - 9:00 AM

[20a-C5-1] [JSAP Paper Award Speech]（30min.）
Photoluminescence Excitation Spectroscopy on Single GaN Quantum Dots

Paweł Podemski^1,2, ^○Mark Holmes¹, Satoshi Kako¹, Munetaka Arita¹, and Yasuhiko Arakawa¹ (The University of Tokyo¹, Wrocław University of Technology²)

9:00 AM - 9:15 AM

[20a-C5-2] Structural and optical characterization of localization centers in Al_xGa_1-x(x < 0.25) thin films

^○Taichi Iki¹, Munetaka Arita², Satoshi Kako¹, Yasuhiko Arakawa^1,2 (IIS, Univ. of Tokyo¹, NanoQuine, Univ. of Tokyo²)

9:15 AM - 9:30 AM

[20a-C5-3] Observation of narrow photoluminescence linewidth [40 μeV] from localization centers in Al_xGa_1-xN (x < 0.25) thin films

^○Munetaka Arita¹, Taichi Iki², Satoshi Kako², Yasuhiko Arakawa^1,2 (NanoQuine, Univ. of Tokyo¹, IIS, Univ. of Tokyo²)

9:30 AM - 9:45 AM

△ [20a-C5-4] Column Diameter Dependence of Emission Lifetime in InGaN Nanocolumns

^○Yutaro Mizuno^1,2, Takao Oto^1,2, Tatsuya Kano^1,2, Rin Miyagawa^1,2, Jun Yoshida^1,2, Katsumi Kishino^1,2 (Sophia Univ.¹, Sophia Nanotech. Res. Center²)

9:45 AM - 10:00 AM

[20a-C5-5] In-plane Distribution of Light Emission and Carrier Dynamics in InGaN Nanocolumns

^○Takao Oto^1,2, Yutaro Mizuno^1,2, Rin Miyagawa^1,2, Tatsuya Kano^1,2, Jun Yoshida^1,2, Mitsuru Funato³, Yoichi Kawakami³, Katsumi Kishino^1,2 (Sophia Univ.¹, Sophia Univ. Nanotech. Res. Center², Kyoto Univ.³)

Break 10:00～10:15 (10:00 AM - 10:15 AM)

10:15 AM - 10:30 AM

[20a-C5-6] Photogenerated Carrier Dynamics of InGaN/GaN Regularly Arranged Nanocolumns I

^○Naoki Shimosako¹, Yuta Inose¹, Kazuhiro Ema^1,2, Katsumi Kishino^1,2 (Sophia Univ.¹, Sophia Nanotechnology Research Center²)

10:30 AM - 10:45 AM

[20a-C5-7] Photogenerated Carrier Dynamics of InGaN/GaN Regularly Arranged Nanocolumns II

^○(PC)Yuta Inose¹, Naoki Shimosako¹, Kazuhiro Ema^1,2, Katsumi Kishino^1,2 (Sophia Univ.¹, Sophia Nanotechnology Research Center²)

10:45 AM - 11:00 AM

[20a-C5-8] Self-formation of cap layer modes on InGaN-based nanocolumn photonic crystals

^○Yuki Sumikawa¹, Shunsuke Ishizawa¹, Katsumi Kishino^1,2 (Sophia Univ.¹, Sophia Nanotechnology Research Center²)

11:00 AM - 11:15 AM

[20a-C5-9] Photoluminescence radiation characteristics of nanocolumn photonic crystals for laser application

^○(PC)Shunsuke Ishizawa¹, Yuki Sumikawa¹, Kai Motoyama¹, Katsumi Kishino^1,2 (Sophia Univ.¹, Sophia Nanotechnology Research Center²)

11:15 AM - 11:30 AM

△ [20a-C5-10] Stimulated emission characteristics of the semi-polar plane InGaN optical cavity on (001) Si substrate

^○Maki Kushimoto¹, Yoshio Honda¹, Hiroshi Amano^1,2 (Nagoya Univ.¹, ARC²)

11:30 AM - 11:45 AM

△ [20a-C5-11] Carrier dynamics in InGaN single quantum wells on (0001) GaN substrates assessed by scanning near field optical microscopy

^○Takayuki Hira¹, Mitsuru Funato¹, Yoichi Kawakami¹, Takashi Miyoshi², Shin-ichi Nagahama² (Kyoto Univ.¹, Nichia Corp.²)

11:45 AM - 12:00 PM

[20a-C5-12] Excitation energy density dependence of nonradiative recombination lifetime and internal quantum efficiency in InGaN-based quantum wells

^○Hideaki Murotani¹, Toko Sugiura¹, Yoichi Yamada², Yoshio Honda³, Hiroshi Amano³ (Toyota Natl. Coll. of Technol.¹, Yamaguchi Univ.², Nagoya Univ.³)