The 75th JSAP Autumn Meeting, 2014

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Oral presentation

15. Crystal Engineering » 15.4 III-V-group nitride crystals

[20a-C5-1~12] 15.4 III-V-group nitride crystals

Sat. Sep 20, 2014 8:30 AM - 12:00 PM C5 (Open Hall)

11:15 AM - 11:30 AM

△ [20a-C5-10] Stimulated emission characteristics of the semi-polar plane InGaN optical cavity on (001) Si substrate

○Maki Kushimoto1, Yoshio Honda1, Hiroshi Amano1,2 (Nagoya Univ.1, ARC2)

Keywords:InGaN,半極性,誘導放出