Poster presentation

[18p-PB9] 15.1 Bulk crystal growth

Thu. Sep 18, 2014 1:30 PM - 3:30 PM PB9 (Gymnasium2)

ポスター掲示時間13:30～15:30(PB9会場)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

1:30 PM - 3:30 PM

▲ [18p-PB9-1] Growth and properties of InGaSb alloy semiconductor crystals grown under microgravity and 1G conditions

^○Nirmal Kumar Velu¹, Arivanandhan Mukannan¹, Rajesh Govindasamy¹, Tadanobu Koyama¹, Yoshimi Momose¹, Yuko Inatomi², Kaoruho Sakata², Takehiko Ishikawa², Masahiro Takayanagi², Shigeki Kamigaichi², Tetsuo Ozawa³, Yasunori Okano⁴, Yasuhiro Hayakawa¹ (RIE, Shizuoka Univ¹, JAXA², Shizuoka Insti Sci.³, Osaka Univ.⁴)

Oral presentation

[20a-A17-1~12] 15.1 Bulk crystal growth

Sat. Sep 20, 2014 9:00 AM - 12:00 PM A17 (E308)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

+Add all to schedule

9:00 AM - 9:15 AM

[20a-A17-1] Temperature distribution and seeding interface shape of large-size sapphire growth by vertical Bridgman technique

^○Chihiro Miyagawa^1,2, Takumi Kobayashi², Toshinori Taishi¹, Keigo Hoshikawa¹ (Shinshu Univ.¹, Fujikoshi Machinery Corp.²)

9:15 AM - 9:30 AM

[20a-A17-2] Growth of Al₂O₃/YAG:Ce-MGC by Vertical Bridgman Method（Ⅰ）

^○(D)Masafumi Yoshimura^1,2, Seiya Yamada¹, Keigo Hoshikawa¹, Shin-ichi Sakata², Hisayoshi Iba², Takafumi Kawano² (Shinshu Univ.¹, Ube Industries Ltd.²)

9:30 AM - 9:45 AM

[20a-A17-3] Growth of Al₂O₃/YAG:Ce MGC by Vertical Bridgman Method(Ⅱ)

^○Keigo Hoshikawa¹, Seiya Yamada¹, Masafumi Yoshimura^1,2, Shin-ichi Sakata² (Shinshu Univ.¹, Ube Industries Ltd.²)

9:45 AM - 10:00 AM

[20a-A17-4] In-situ Observation of Phase-separated CsI-NaCl Scintillator growth

^○Nobuhiro Yasui¹, Yoshihiro Ohashi¹, Toru Den¹ (Canon Inc.¹)

10:00 AM - 10:15 AM

[20a-A17-5] Growth and luminescence properties of Eu3+, Y3+ co-doped HfO2/Al2O3 eutectics

^○Kosuke Hishinuma¹, Kei Kamada^2,3, Akihiro Yamaji¹, Shunsuke Kurosawa¹, Yuui Yokota², Pejchal Jan², Yuji Ohashi¹, Akira Yoshikawa^1,2,3 (IMR Tohoku Univ.¹, NICHe Tohoku Univ.², C&A³)

10:15 AM - 10:30 AM

[20a-A17-6] Crystal growth of (Gd,Y)₃(Al,Ga)₅O₁₂ scintillators with a diameter of 1 inch and their scintillation properties

^○Shusnuke Kurosawa^1,2, Mafuyu Seki¹, Kei Kamada^2,3, Yasuhiro Shoji^1,3, Jan Pejchal^2,4, Yuji Ohashi¹, Yuui Yokota², Akira Yoshikawa^1,2,3 (Tohoku Univ. IMR¹, Tohoku Univ. NICHe², C&A³, ASCR⁴)

10:30 AM - 10:45 AM

[20a-A17-7] Effect of Pr Doping for CeBr₃ Crystals Grown by the Micro-Pulling-Down Method

^○Tomoki Ito¹, Yuui Yokota², Shunsuke Kurosawa^1,2, Pejchal Jan^2,4, Yuji Ohashi¹, Kei Kamada^2,3, Akira Yoshikawa^1,2,3 (IMR Tohoku Univ.¹, NICHe Tohoku Univ.², C&A Corp.³, Institue of Physics AS CR⁴)

10:45 AM - 11:00 AM

△ [20a-A17-8] Scintillation Properties of Mg/Ce Co-doped (La, Gd)₂Si₂O₇ Single Crystals Grown by the Czochralski Process

^○(M1)Rikito Murakami¹, Shunsuke Kurosawa^1,2, Yasuhiro Shoji^1,4, Yuui Yokota², Pejcal Jan^2,3, Yuji Ohashi¹, Kei Kamada^2,4, Akira Yoshikawa^1,2,4 (Tohoku Univ. IMR¹, Tohoku Univ. NICHe², Inst. of Phisics AS CR³, C&A Corp.⁴)

11:00 AM - 11:15 AM

[20a-A17-9] Grain growth in Gd₂Si₂O₇ polycrystals and their scintillation properties for alpha-particles

Mami Nishikata¹, ^○Mikio Higuchi¹, Aki Ueda¹, Youichi Tsubota¹, Junichi Kaneko¹, Hiroyuki Ishibashi², Kiyoharu Tadanaga¹ (Hokkaido Univ.¹, Hitachi Chemical²)

11:15 AM - 11:30 AM

[20a-A17-10] Spectroscopic properties of Cr,Nd:CaREAlO4 single crystals grown by the floating zone method (RE=Y, La, Gd)

^○Daisuke Ikutame¹, Aki Ueda¹, Mikio Higuchi¹, Kiyoharu Tadanaga¹, Takayo Ogawa², Satoshi Wada² (Hokkaidou Univ.¹, RIKEN²)

11:30 AM - 11:45 AM

[20a-A17-11] Growth of organic nonlinear material of BNA single crystal by micro-pulling down method and its evaluations

^○Kei Kamada^1,2, Yuma Takida³, Hiroaki Minamide³, Shunsuke Kurosawa⁴, Yuui Yokota¹, Yasuhiro Shoji^2,3, Jan Pejchal¹, Yuji Ohashi⁴, Akira Yoshikawa^1,2,4 (NICHe,Tohoku Univ.¹, C&A corporation², RIKEN³, IMR,Tohoku Univ.⁴)

11:45 AM - 12:00 PM

[20a-A17-12] Growth and characterizations of Ca₃Ta(Ga_xAl_1-x)₃Si₂O₁₄ (x = 0, 0.5, 1)piezoelectric single crystals by Cz method

^○(M2)Tetsuo Kudo¹, Yuui Yokota², Ohashi Yuji¹, Yasuhiro Shoji^1,3, Kei Kamada^2,3, Shunsuke Kurosawa^1,2, Pejchal Jan², Akira Yoshikawa^1,2,3 (IMR Tohoku Univ.¹, NICHe Tohoku Univ.², C&A Corp.³)

Oral presentation

[20p-A17-1~8] 15.1 Bulk crystal growth

Sat. Sep 20, 2014 1:00 PM - 3:00 PM A17 (E308)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

+Add all to schedule

Lunch 12:00～13:00 （12:00 PM - 1:00 PM）

1:00 PM - 1:15 PM

[20p-A17-1] Growth of KTN crystals by the raw material supply vertical Bridgman method

^○Takahiro Kojima¹, Jyunya Osada¹, Syunji Takekawa¹, masahiro Sasaura¹, Takayuki Komatsu², Toshinori Taishi³, Keigo Hoshikawa³, Yasunori Furukawa¹ (Oxide Corp.¹, NTT-AT Corp.², Shinshuu Univ.³)

1:15 PM - 1:30 PM

[20p-A17-2] Czochralski growth of ferroelectric LaBGeO₅ single crystals for UV-generation

^○Mitsuyoshi Sakairi¹, Makoto Matsukura¹, Junji Hirohashi¹, Shintaro Miyazawa^1,2, Shunji Takekawa¹, Yasunori Furukawa¹ (OXIDE Corp.¹, Waseda Univ. Zaiken²)

1:30 PM - 1:45 PM

△ [20p-A17-3] FZ growth and FTIR characterization of bismuth doped silicon single crystals

^○(M1)Kaito Yamada¹, Kohei Itoh¹ (Keio Univ.¹)

1:45 PM - 2:00 PM

[20p-A17-4] Effects of Mirror Position on the Crystal Shape Grown by the IR-FZ Method

^○Satoshi Watauchi^1,2, Md. Mukter Hossain¹, Masanori Nagao¹, Isao Tanaka¹ (Univ. of Yamanashi¹, PRESTO, JST²)

2:00 PM - 2:15 PM

[20p-A17-5] Control of Sub-grains in Protein Crystals under an External Electric Field

^○Haruhiko Koizumi¹, Satoshi Uda¹, Kozo Fujiwara¹, Masaru Tachibana², Kenichi Kojima³, Jun Nozawa¹ (IMR, Tohoku Univ.¹, Yokohama City Univ.², Yokohama Soei Univ.³)

2:15 PM - 2:30 PM

[20p-A17-6] Structure of Silica Colloid Crystals formed by Sedimentation

^○Yoshimasa Ohki¹, Yuji Nakano¹, Satoshi Kawanaka¹, Hiroki Imai¹, Fumio Uchida¹ (Fuji Chemical Co., LTD.¹)

2:30 PM - 2:45 PM

[20p-A17-7] Homogeneous SiGe crystals grown by the TLZ method in microgravity condition

^○yasutomo arai¹, kyoichi kinoshita¹, masahiro takayanagi¹ (JAXA¹)

2:45 PM - 3:00 PM

[20p-A17-8] Examination of Se addition effect for the growth of high quality AgGaSe₂ single crystals

^○Masami Susaki¹ (OPUCT¹)

Sessions

15. Crystal Engineering » 15.1 Bulk crystal growth

[18p-PB9] 15.1 Bulk crystal growth

▲ [18p-PB9-1] Growth and properties of InGaSb alloy semiconductor crystals grown under microgravity and 1G conditions

[20a-A17-1~12] 15.1 Bulk crystal growth

[20a-A17-1] Temperature distribution and seeding interface shape of large-size sapphire growth by vertical Bridgman technique

[20a-A17-2] Growth of Al₂O₃/YAG:Ce-MGC by Vertical Bridgman Method（Ⅰ）

[20a-A17-3] Growth of Al₂O₃/YAG:Ce MGC by Vertical Bridgman Method(Ⅱ)

[20a-A17-4] In-situ Observation of Phase-separated CsI-NaCl Scintillator growth

[20a-A17-5] Growth and luminescence properties of Eu3+, Y3+ co-doped HfO2/Al2O3 eutectics

[20a-A17-6] Crystal growth of (Gd,Y)₃(Al,Ga)₅O₁₂ scintillators with a diameter of 1 inch and their scintillation properties

[20a-A17-7] Effect of Pr Doping for CeBr₃ Crystals Grown by the Micro-Pulling-Down Method

△ [20a-A17-8] Scintillation Properties of Mg/Ce Co-doped (La, Gd)₂Si₂O₇ Single Crystals Grown by the Czochralski Process

[20a-A17-9] Grain growth in Gd₂Si₂O₇ polycrystals and their scintillation properties for alpha-particles

[20a-A17-10] Spectroscopic properties of Cr,Nd:CaREAlO4 single crystals grown by the floating zone method (RE=Y, La, Gd)

[20a-A17-11] Growth of organic nonlinear material of BNA single crystal by micro-pulling down method and its evaluations

[20a-A17-12] Growth and characterizations of Ca₃Ta(Ga_xAl_1-x)₃Si₂O₁₄ (x = 0, 0.5, 1)piezoelectric single crystals by Cz method

[20p-A17-1~8] 15.1 Bulk crystal growth

[20p-A17-1] Growth of KTN crystals by the raw material supply vertical Bridgman method

[20p-A17-2] Czochralski growth of ferroelectric LaBGeO₅ single crystals for UV-generation

△ [20p-A17-3] FZ growth and FTIR characterization of bismuth doped silicon single crystals

[20p-A17-4] Effects of Mirror Position on the Crystal Shape Grown by the IR-FZ Method

[20p-A17-5] Control of Sub-grains in Protein Crystals under an External Electric Field

[20p-A17-6] Structure of Silica Colloid Crystals formed by Sedimentation

[20p-A17-7] Homogeneous SiGe crystals grown by the TLZ method in microgravity condition

[20p-A17-8] Examination of Se addition effect for the growth of high quality AgGaSe₂ single crystals

Sessions

15. Crystal Engineering » 15.1 Bulk crystal growth

[18p-PB9] 15.1 Bulk crystal growth

▲ [18p-PB9-1] Growth and properties of InGaSb alloy semiconductor crystals grown under microgravity and 1G conditions

[20a-A17-1~12] 15.1 Bulk crystal growth

△ [20a-A17-8] Scintillation Properties of Mg/Ce Co-doped (La, Gd)2Si2O7 Single Crystals Grown by the Czochralski Process

[20p-A17-1~8] 15.1 Bulk crystal growth

△ [20p-A17-3] FZ growth and FTIR characterization of bismuth doped silicon single crystals

△ [20a-A17-8] Scintillation Properties of Mg/Ce Co-doped (La, Gd)₂Si₂O₇ Single Crystals Grown by the Czochralski Process