Short Oral presentation

[17p-S2-44~48] 10.4 Semiconductors, organic, optical, and quantum spintronics

Wed. Sep 17, 2014 2:56 PM - 3:06 PM S2 (S2)

ポスター掲示時間16:00～18:00(PB会場)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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2:56 PM - 2:58 PM

[17p-S2-44] Electron spin dynamics in semiconductor measured by time resolved STM

^○Shoji Yoshida¹, Wang Zi-han¹, Hisaka Okuyama¹, Osamu Takeuchi¹, Hidemi Shigekawa¹ (Univ. of Tsukuba¹)

2:58 PM - 3:00 PM

▲ [17p-S2-45] A spin-rotation interferometer

Yu Iwasaki¹, Taketomo Nakamura¹, Yoshiaki Hashimoto¹, Yasuhiro Iye¹, ^○Shingo Katsumoto¹ (ISSP, Univ. Tokyo¹)

3:00 PM - 3:02 PM

▲ [17p-S2-46] The effect of F-doping on magnetism in diluted magnetic semiconductor (Zn,Co)O thin films

^○(M2)Ryo Ishikawa¹, Ryota Akiyama¹, Shinji Kuroda¹ (Grad. School of Pure & Appl. Sci., Univ. Tsukuba¹)

3:02 PM - 3:04 PM

[17p-S2-47] Crystal Structure and magnetism of ternary transition-metal chalcogenide (Mn,Cr)Te thin films grown by MBE

^○(M1)Akira Ito¹, Ken Kanazawa¹, Shinji Kuroda¹ (Grad.School of Pure&Appl.Sci.,Univ.of Tsukuba¹)

3:04 PM - 3:06 PM

[17p-S2-48] Control of conduction in Ce doped Si films using organic ferroelectric, P(VDF-TrFE)

^○Yusuke Miyata¹, KAzuya Ueno¹, Takeshi Yoshimura¹, Atsushi Ashida¹, Norifumi Fujimura¹ (Osaka Pref. Univ.¹)

Oral presentation

[19p-S2-1~15] 10.4 Semiconductors, organic, optical, and quantum spintronics

Fri. Sep 19, 2014 1:15 PM - 5:15 PM S2 (S2)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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1:15 PM - 1:30 PM

[19p-S2-1] Room temperature and high current density spin injection into (110) GaAs QWs using Fe/AlO_x contacts

^○Nobuhide Yokota¹, Yohei Aoshima¹, Kazuhiro Ikeda¹, Nozomi Nishizawa², Hiro Munekata², Hitoshi Kawaguchi¹ (NAIST¹, Tokyo Inst. of Tech.²)

1:30 PM - 1:45 PM

▲ [19p-S2-2] Spin injection from epitaxially grown Fe into an InAs quantum well

Yoshiaki Hashimoto¹, Taketomo Nakamura¹, Yasuhiro Iye¹, ^○Shingo Katsumoto¹ (ISSP, Univ. Tokyo¹)

1:45 PM - 2:00 PM

▼ [19p-S2-3] Electrical detection of nuclear magnetic resonance in GaAs using transient oblique Hanle signals

^○Takafumi Akiho¹, Yuya Ebina¹, Masafumi Yamamoto¹, Tetsuya Uemura¹ (Division of Electronics for Informatics, Hokkaido Univ.¹)

2:00 PM - 2:15 PM

▼ [19p-S2-4] Observation of Reflection and Tunnel Effect in Photoinduced Spin Waves by Spatio-Temporally Resolved Imaging

^○(D)Isao Yoshimine¹, Takuya Satoh², Tsutomu Shimura¹ (Univ. of Tokyo¹, Kyushu Univ.²)

2:15 PM - 2:30 PM

▼ [19p-S2-5] Observation of spin relaxation in Be-doped InGaAsP by time-resolved pump and probe measurement (10-300 K)

^○Hao Wu¹, Ryo Harasawa¹, Naoki Yamamoto¹, Takanori Aritake¹, Shulong Lu², Lian Ji², Atsushi Tackeuchi¹ (Waseda Univ.¹, SINANO-CAS²)

2:30 PM - 2:45 PM

△ [19p-S2-6] Observation of spin relaxation in Be doped GaAs by pump and probe reflectance measurement

^○Takanori Aritake¹, Ryo Harasawa¹, Naoki Yamamoto¹, Hao Wu¹, Shulong Lu², Pan Dai², Atsushi Tackeuchi¹ (Waseda Univ.¹, SINANO-CAS²)

2:45 PM - 3:00 PM

△ [19p-S2-7] Picosecond spin relaxation of band to carbon acceptor transition in low-temperature grown GaAs

^○(M2)Kazuki Honda¹, Yuya Yasue¹, Masaki Asakawa¹, Lu Shulong², Dai Pan², Atsushi Tackeuchi¹ (Waseda Univ.¹, SINANO-CAS²)

Break 15:00～15:15 （3:00 PM - 3:15 PM）

3:15 PM - 3:30 PM

▼ [19p-S2-8] Modulation of spin precession frequency by spin relaxation anisotropy in a (110) GaAs/AlGaAs quantum well

^○Asuka Aoki¹, Makoto Kohda¹, Jun Ishihara², Yuzo Ohno³, Fumihiro Matsukura^2,4, Hideo Ohno^2,4, Junsaku Nitta¹ (Tohoku Univ.¹, RIEC, Tohoku Univ.², Tsukuba Univ.³, WPI-AIMR, Tohoku Univ.⁴)

3:30 PM - 3:45 PM

▲ [19p-S2-9] Detection of the exact persistent spin helix state using drift spin transport in GaAs quantum well

^○Yoji Kunihashi¹, Haruki Sanada¹, Hideki Gotoh¹, Koji Onomitsu¹, Makoto Kohda², Junsaku Nitta², Tetsuomi Sogawa¹ (NTT BRL¹, Tohoku Univ.²)

3:45 PM - 4:00 PM

▼ [19p-S2-10] Determination of spin-orbit interaction coefficients under persistent and inverse persistent spin helix states in an InGaAs/InAlAs quantum well

^○Kohei Yoshizumi¹, Atsuya Sasaki¹, Makoto Kohda¹, Junsaku Nitta¹ (Tohoku Univ.¹)

4:00 PM - 4:15 PM

▲ [19p-S2-11] Room temperature spin relaxation in InGaAs quantum wells

^○Ken Morita^1,2, Ryota Kurosawa¹, Tatsuya Oda², Yoshihiro Ishitani¹, Takahiro Kitada², Toshiro Isu² (Chiba Univ.¹, Tokushima Univ.²)

4:15 PM - 4:30 PM

[19p-S2-12] Spatial mapping of spin polarization in InGaAs quantum wells using Monte Carlo simulation

^○(M1)Ryota Kurosawa¹, Ken Morita¹, Yoshihiro Ishitani¹ (Chiba Univ.¹)

4:30 PM - 4:45 PM

[19p-S2-13] Microscopic pump-probe measurement of electron spin relaxation time in (110) InGaAs/InAlAs MQWs

^○Nobuhide Yokota¹, Yusuke Yasuda¹, Kazuhiro Ikeda¹, Hitoshi Kawaguchi¹ (NAIST¹)

4:45 PM - 5:00 PM

▲ [19p-S2-14] Spin-injection dynamics via tunneling from InGaAs quantum wells into quantum dots; dependence of tunneling-barrier thickness

^○(M2)Takafimi Yamamura¹, Xiaojie Yang¹, Takayuki Kiba¹, Junichi Takayama¹, Subagyo Agus¹, Kazuhisa Sueoka¹, Akihiro Murayama¹ (Graduate School of Information Science and Technology, Hokkaido University¹)

5:00 PM - 5:15 PM

▲ [19p-S2-15] Magnetization Process of the n-type Ferromagnetic Semiconductor (In,Fe)As:Be Studied by X-ray Magnetic Circular Dichroism

^○Shoya Sakamoto¹, Anh Le Duc¹, Hai Pham Nam¹, Goro Shibata¹, Yukio Takahashi¹, Yukiharu Takeda², Masaki Kobayashi³, Tsuneharu Koide³, Masaaki Tanaka¹, Atsushi Fujimori¹ (Univ. of Tokyo¹, JAEA², IMSS³)

Oral presentation

[20a-S10-1~12] 10.4 Semiconductors, organic, optical, and quantum spintronics

Sat. Sep 20, 2014 9:00 AM - 12:00 PM S10 (S10)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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9:00 AM - 9:15 AM

▼ [20a-S10-1] Structural analysis of group-IV-based ferromagnetic semiconductor GeFe by MeV-ion channeling

^○(D)Yuki Wakabayashi¹, Shinobu Ohya¹, Yoshisuke Ban¹, Masaaki Tanaka¹ (The University of Tokyo¹)

9:15 AM - 9:30 AM

▲ [20a-S10-2] Origin of ferromagnetism in GaMnAs from a new theoretical viewpoint

^〇Van An Dinh¹, Kazunori Sato¹, Hiroshi Katayama-Yoshida², Tomoyuki Kakeshita¹ (Graduate School of Engineering, Osaka University¹, Graduate School of Engineering Science, Osaka University²)

9:30 AM - 9:45 AM

▼ [20a-S10-3] Identification of impurity band and valence band in GaMnAs by tunneling anisotropic magnetoresistance spectroscopy

^○(PC)Iriya Muneta¹, Toshiki Kanaki¹, Shinobu Ohya¹, Masaaki Tanaka¹ (Univ. of Tokyo¹)

9:45 AM - 10:00 AM

▲ [20a-S10-4] Study of Cr impurity states in diluted magnetic semiconductor (Zn,Cr)Te by STM/STS

^○Taku Nishimura¹, Ken Kanazawa¹, Shoji Yoshida¹, Hidemi Shigekawa¹, Shinji Kuroda¹ (Univ. of Tsukuba¹)

10:00 AM - 10:15 AM

▼ [20a-S10-5] Spin dynamics induced by linearly-polarized-pump lights in ferromagnetic semiconductor GaMnAs

^○(M2)Tomoaki Ishii¹, Tadashi Kawazoe¹, Yusuke Hashimoto², Iriya Muneta¹, Motoichi Ohtsu¹, Masaaki Tanaka¹, Shinobu Ohya¹ (Univ. of Tokyo¹, Radboud Univ. Nijmegen²)

10:15 AM - 10:30 AM

▼ [20a-S10-6] Estimation of the off-diagonal element of the dielectric tensor of GaMnAs

^○Hiroshi Terada¹, Shinobu Ohya¹, Masaaki Tanaka¹ (The Univ. of Tokyo¹)

10:30 AM - 10:45 AM

▼ [20a-S10-7] (Ga,Fe)Sb: a new p-type ferromagnetic semiconductor

^〇Thanh Tu Nguyen, Nam Hai Pham, Duc Anh Le, Masaaki Tanaka (University of Tokyo)

10:45 AM - 11:00 AM

▼ [20a-S10-8] Enhancement of ferromagnetism by manipulating the wavefunctions in n-type ferromagnetic semiconductor (In,Fe)As quantum wells

^○Duc Anh Le¹, Nam Hai Pham¹, Yuichi Kasahara¹, Yoshihiro Iwasa¹, Masaaki Tanaka¹ (Tokyo univ.¹)

11:00 AM - 11:15 AM

[20a-S10-9] Mn δ doping into IV-group semiconductors based on nanostructure

^○K. Miki^1,2, K. Murata^1,2, K. Nitta³, S. Tsubomatsu^1,2, T. Kanazawa^1,2, K. Nittoh¹, O. Sakata¹, Y. Terada³, T. Uruga³ (NIMS¹, Univ. Tsukuba², JASRI³)

11:15 AM - 11:30 AM

▼ [20a-S10-10] Fabrication and magnetic resonance of Ferromagnetic Chiral Meta-molecules

^○Toshiyuki Kodama¹, Satoshi Tomita¹, Kei Sawada², Nobuyoshi Hosoito¹, Hisao Yanagi¹ (GSMS-NAIST¹, RIKEN SPring-8 Center²)

11:30 AM - 11:45 AM

▲ [20a-S10-11] Magnetotransport properties of vertical spin valves of graphene/cobalt junctions

^○Shiro Entani¹, Hiroshi Naramoto¹, Seiji Sakai¹ (JAEA¹)

11:45 AM - 12:00 PM

▼ [20a-S10-12] Observation of dark states in a superconductor diamond quantum hybrid system

^○Yuichiro Matsuzaki¹, Zhu Xiab¹, Robert Amsuss^1,2, Kousuke Kakuyanagi¹, Takaaki Shimo-oka³, Norikazu Mizuochi³, Kae Nemoto⁴, Kouichi Semba⁵, William Munro¹, Shiro Saito¹ (NTT BRL¹, TU Wien², Osaka Univ.³, NII⁴, NICT⁵)

Sessions

10. Spintronics and Magnetics » 10.4 Semiconductors, organic, optical, and quantum spintronics

[17p-S2-44~48] 10.4 Semiconductors, organic, optical, and quantum spintronics

[17p-S2-44] Electron spin dynamics in semiconductor measured by time resolved STM

▲ [17p-S2-45] A spin-rotation interferometer

▲ [17p-S2-46] The effect of F-doping on magnetism in diluted magnetic semiconductor (Zn,Co)O thin films

[17p-S2-47] Crystal Structure and magnetism of ternary transition-metal chalcogenide (Mn,Cr)Te thin films grown by MBE

[17p-S2-48] Control of conduction in Ce doped Si films using organic ferroelectric, P(VDF-TrFE)

[19p-S2-1~15] 10.4 Semiconductors, organic, optical, and quantum spintronics

[19p-S2-1] Room temperature and high current density spin injection into (110) GaAs QWs using Fe/AlO_x contacts

▲ [19p-S2-2] Spin injection from epitaxially grown Fe into an InAs quantum well

▼ [19p-S2-3] Electrical detection of nuclear magnetic resonance in GaAs using transient oblique Hanle signals

▼ [19p-S2-4] Observation of Reflection and Tunnel Effect in Photoinduced Spin Waves by Spatio-Temporally Resolved Imaging

▼ [19p-S2-5] Observation of spin relaxation in Be-doped InGaAsP by time-resolved pump and probe measurement (10-300 K)

△ [19p-S2-6] Observation of spin relaxation in Be doped GaAs by pump and probe reflectance measurement

△ [19p-S2-7] Picosecond spin relaxation of band to carbon acceptor transition in low-temperature grown GaAs

▼ [19p-S2-8] Modulation of spin precession frequency by spin relaxation anisotropy in a (110) GaAs/AlGaAs quantum well

▲ [19p-S2-9] Detection of the exact persistent spin helix state using drift spin transport in GaAs quantum well

▼ [19p-S2-10] Determination of spin-orbit interaction coefficients under persistent and inverse persistent spin helix states in an InGaAs/InAlAs quantum well

▲ [19p-S2-11] Room temperature spin relaxation in InGaAs quantum wells

[19p-S2-12] Spatial mapping of spin polarization in InGaAs quantum wells using Monte Carlo simulation

[19p-S2-13] Microscopic pump-probe measurement of electron spin relaxation time in (110) InGaAs/InAlAs MQWs

▲ [19p-S2-14] Spin-injection dynamics via tunneling from InGaAs quantum wells into quantum dots; dependence of tunneling-barrier thickness

▲ [19p-S2-15] Magnetization Process of the n-type Ferromagnetic Semiconductor (In,Fe)As:Be Studied by X-ray Magnetic Circular Dichroism

[20a-S10-1~12] 10.4 Semiconductors, organic, optical, and quantum spintronics

▼ [20a-S10-1] Structural analysis of group-IV-based ferromagnetic semiconductor GeFe by MeV-ion channeling

▲ [20a-S10-2] Origin of ferromagnetism in GaMnAs from a new theoretical viewpoint

▼ [20a-S10-3] Identification of impurity band and valence band in GaMnAs by tunneling anisotropic magnetoresistance spectroscopy

▲ [20a-S10-4] Study of Cr impurity states in diluted magnetic semiconductor (Zn,Cr)Te by STM/STS

▼ [20a-S10-5] Spin dynamics induced by linearly-polarized-pump lights in ferromagnetic semiconductor GaMnAs

▼ [20a-S10-6] Estimation of the off-diagonal element of the dielectric tensor of GaMnAs

▼ [20a-S10-7] (Ga,Fe)Sb: a new p-type ferromagnetic semiconductor

▼ [20a-S10-8] Enhancement of ferromagnetism by manipulating the wavefunctions in n-type ferromagnetic semiconductor (In,Fe)As quantum wells

[20a-S10-9] Mn δ doping into IV-group semiconductors based on nanostructure

▼ [20a-S10-10] Fabrication and magnetic resonance of Ferromagnetic Chiral Meta-molecules

▲ [20a-S10-11] Magnetotransport properties of vertical spin valves of graphene/cobalt junctions

▼ [20a-S10-12] Observation of dark states in a superconductor diamond quantum hybrid system

Sessions

10. Spintronics and Magnetics » 10.4 Semiconductors, organic, optical, and quantum spintronics

[17p-S2-44~48] 10.4 Semiconductors, organic, optical, and quantum spintronics

[17p-S2-44] Electron spin dynamics in semiconductor measured by time resolved STM

▲ [17p-S2-45] A spin-rotation interferometer

▲ [17p-S2-46] The effect of F-doping on magnetism in diluted magnetic semiconductor (Zn,Co)O thin films

[17p-S2-47] Crystal Structure and magnetism of ternary transition-metal chalcogenide (Mn,Cr)Te thin films grown by MBE

[17p-S2-48] Control of conduction in Ce doped Si films using organic ferroelectric, P(VDF-TrFE)

[19p-S2-1~15] 10.4 Semiconductors, organic, optical, and quantum spintronics

[19p-S2-1] Room temperature and high current density spin injection into (110) GaAs QWs using Fe/AlOx contacts

▲ [19p-S2-2] Spin injection from epitaxially grown Fe into an InAs quantum well

▼ [19p-S2-3] Electrical detection of nuclear magnetic resonance in GaAs using transient oblique Hanle signals

▼ [19p-S2-4] Observation of Reflection and Tunnel Effect in Photoinduced Spin Waves by Spatio-Temporally Resolved Imaging

▼ [19p-S2-5] Observation of spin relaxation in Be-doped InGaAsP by time-resolved pump and probe measurement (10-300 K)

△ [19p-S2-6] Observation of spin relaxation in Be doped GaAs by pump and probe reflectance measurement

△ [19p-S2-7] Picosecond spin relaxation of band to carbon acceptor transition in low-temperature grown GaAs

▼ [19p-S2-8] Modulation of spin precession frequency by spin relaxation anisotropy in a (110) GaAs/AlGaAs quantum well

▲ [19p-S2-9] Detection of the exact persistent spin helix state using drift spin transport in GaAs quantum well

▼ [19p-S2-10] Determination of spin-orbit interaction coefficients under persistent and inverse persistent spin helix states in an InGaAs/InAlAs quantum well

▲ [19p-S2-11] Room temperature spin relaxation in InGaAs quantum wells

[19p-S2-12] Spatial mapping of spin polarization in InGaAs quantum wells using Monte Carlo simulation

[19p-S2-13] Microscopic pump-probe measurement of electron spin relaxation time in (110) InGaAs/InAlAs MQWs

▲ [19p-S2-14] Spin-injection dynamics via tunneling from InGaAs quantum wells into quantum dots; dependence of tunneling-barrier thickness

▲ [19p-S2-15] Magnetization Process of the n-type Ferromagnetic Semiconductor (In,Fe)As:Be Studied by X-ray Magnetic Circular Dichroism

[20a-S10-1~12] 10.4 Semiconductors, organic, optical, and quantum spintronics

▼ [20a-S10-1] Structural analysis of group-IV-based ferromagnetic semiconductor GeFe by MeV-ion channeling

▲ [20a-S10-2] Origin of ferromagnetism in GaMnAs from a new theoretical viewpoint

▼ [20a-S10-3] Identification of impurity band and valence band in GaMnAs by tunneling anisotropic magnetoresistance spectroscopy

▲ [20a-S10-4] Study of Cr impurity states in diluted magnetic semiconductor (Zn,Cr)Te by STM/STS

▼ [20a-S10-5] Spin dynamics induced by linearly-polarized-pump lights in ferromagnetic semiconductor GaMnAs

▼ [20a-S10-6] Estimation of the off-diagonal element of the dielectric tensor of GaMnAs

▼ [20a-S10-7] (Ga,Fe)Sb: a new p-type ferromagnetic semiconductor

▼ [20a-S10-8] Enhancement of ferromagnetism by manipulating the wavefunctions in n-type ferromagnetic semiconductor (In,Fe)As quantum wells

[20a-S10-9] Mn δ doping into IV-group semiconductors based on nanostructure

▼ [20a-S10-10] Fabrication and magnetic resonance of Ferromagnetic Chiral Meta-molecules

▲ [20a-S10-11] Magnetotransport properties of vertical spin valves of graphene/cobalt junctions

▼ [20a-S10-12] Observation of dark states in a superconductor diamond quantum hybrid system

[19p-S2-1] Room temperature and high current density spin injection into (110) GaAs QWs using Fe/AlO_x contacts