^〇Van An Dinh¹，Kazunori Sato¹，Hiroshi Katayama-Yoshida²，Tomoyuki Kakeshita¹ (Graduate School of Engineering, Osaka University¹，Graduate School of Engineering Science, Osaka University²)

09:30 〜 09:45

▼ [20a-S10-3] Identification of impurity band and valence band in GaMnAs by tunneling anisotropic magnetoresistance spectroscopy

^○（PC）宗田伊理也，金木俊樹，大矢忍，田中雅明 (Univ. of Tokyo)

09:45 〜 10:00

▲ [20a-S10-4] Study of Cr impurity states in diluted magnetic semiconductor (Zn,Cr)Te by STM/STS

^○西村拓，金澤研，吉田昭二，重川秀実，黒田眞司 (筑波大)

10:00 〜 10:15

▼ [20a-S10-5] Spin dynamics induced by linearly-polarized-pump lights in ferromagnetic semiconductor GaMnAs

^○（M2）石井友章¹，川添忠¹，橋本佑介²，宗田伊理也¹，大津元一¹，田中雅明¹，大矢忍¹ (東大院工¹，Radboud大 Nijmegen²)

10:15 〜 10:30

▼ [20a-S10-6] Estimation of the off-diagonal element of the dielectric tensor of GaMnAs

^○寺田博，大矢忍，田中雅明 (東大院工)

10:30 〜 10:45

▼ [20a-S10-7] (Ga,Fe)Sb: a new p-type ferromagnetic semiconductor

^〇Thanh Tu Nguyen，Nam Hai Pham，Duc Anh Le，Masaaki Tanaka (University of Tokyo)

10:45 〜 11:00

▼ [20a-S10-8] Enhancement of ferromagnetism by manipulating the wavefunctions in n-type ferromagnetic semiconductor (In,Fe)As quantum wells

^○Duc Anh Le，Nam Hai Pham，笠原裕一，岩佐義宏，田中雅明 (東大院工)

11:00 〜 11:15

[20a-S10-9] 界面ナノ構造を利用したIV族半導体へのMn δドーピング

^○三木一司^1,2，村田晃一^1,2，新田清文³，坪松悟史^1,2，金澤孝^1,2，日塔光一¹，坂田修身¹，寺田靖子³，宇留賀朋哉³ (物材機構¹，筑波大院数物²，JASRI³)

11:15 〜 11:30

▼ [20a-S10-10] Fabrication and magnetic resonance of Ferromagnetic Chiral Meta-molecules

^○児玉俊之¹，冨田知志¹，澤田桂²，細糸信好¹，柳久雄¹ (奈良先端大物質¹，理研Spring-8²)

11:30 〜 11:45

▲ [20a-S10-11] Magnetotransport properties of vertical spin valves of graphene/cobalt junctions

^○圓谷志郎，楢本洋，境誠司 (原子力機構)

11:45 〜 12:00

▼ [20a-S10-12] Observation of dark states in a superconductor diamond quantum hybrid system

^○松崎雄一郎¹，ズーシャオボ¹，ロバートアムサス^1,2，角柳孝輔¹，下岡孝明³，水落憲和³，根本香絵⁴，仙場浩一⁵，ウィリアムムンロー¹，齊藤志郎¹ (NTT物性基礎研¹，ウィーン工科大²，阪大基礎工³，国立情報学研⁴，情報通信研究機構⁵)

セッション一覧

10．スピントロニクス・マグネティクス » 10.4 半導体・有機・光・量子スピントロニクス

[17p-S2-44~48] 10.4 半導体・有機・光・量子スピントロニクス

[17p-S2-44] 時間分解STMを用いた半導体電子スピンダイナミクス計測

▲ [17p-S2-45] A spin-rotation interferometer

▲ [17p-S2-46] The effect of F-doping on magnetism in diluted magnetic semiconductor (Zn,Co)O thin films

[17p-S2-47] MBE成長した三元化合物(Mn,Cr)Te薄膜の結晶構造と磁性

[17p-S2-48] 有機強誘電体P(VDF-TrFE)を用いたCe添加Si薄膜の伝導制御

[19p-S2-1~15] 10.4 半導体・有機・光・量子スピントロニクス

[19p-S2-1] Fe/AlO_x電極による(110)GaAs QWへの室温高電流密度スピン注入

▲ [19p-S2-2] Spin injection from epitaxially grown Fe into an InAs quantum well

▼ [19p-S2-3] Electrical detection of nuclear magnetic resonance in GaAs using transient oblique Hanle signals

▼ [19p-S2-4] Observation of Reflection and Tunnel Effect in Photoinduced Spin Waves by Spatio-Temporally Resolved Imaging

▼ [19p-S2-5] Observation of spin relaxation in Be-doped InGaAsP by time-resolved pump and probe measurement (10-300 K)

△ [19p-S2-6] ポンププローブ反射計測によるBeドープGaAsのスピン緩和の観測

△ [19p-S2-7] 低温成長GaAsの伝導帯-カーボンアクセプター間遷移でのスピン緩和

▼ [19p-S2-8] Modulation of spin precession frequency by spin relaxation anisotropy in a (110) GaAs/AlGaAs quantum well

▲ [19p-S2-9] Detection of the exact persistent spin helix state using drift spin transport in GaAs quantum well

▼ [19p-S2-10] Determination of spin-orbit interaction coefficients under persistent and inverse persistent spin helix states in an InGaAs/InAlAs quantum well

▲ [19p-S2-11] Room temperature spin relaxation in InGaAs quantum wells

[19p-S2-12] Monte Carlo法に基づくInGaAs系量子井戸中スピン偏極の空間マッピング

[19p-S2-13] 顕微ポンプ・プローブ法による(110)InGaAs/InAlAs MQWの電子スピン緩和時間測定

▲ [19p-S2-14] Spin-injection dynamics via tunneling from InGaAs quantum wells into quantum dots; dependence of tunneling-barrier thickness

▲ [19p-S2-15] Magnetization Process of the n-type Ferromagnetic Semiconductor (In,Fe)As:Be Studied by X-ray Magnetic Circular Dichroism

[20a-S10-1~12] 10.4 半導体・有機・光・量子スピントロニクス

▼ [20a-S10-1] Structural analysis of group-IV-based ferromagnetic semiconductor GeFe by MeV-ion channeling

▲ [20a-S10-2] Origin of ferromagnetism in GaMnAs from a new theoretical viewpoint

▼ [20a-S10-3] Identification of impurity band and valence band in GaMnAs by tunneling anisotropic magnetoresistance spectroscopy

▲ [20a-S10-4] Study of Cr impurity states in diluted magnetic semiconductor (Zn,Cr)Te by STM/STS

▼ [20a-S10-5] Spin dynamics induced by linearly-polarized-pump lights in ferromagnetic semiconductor GaMnAs

▼ [20a-S10-6] Estimation of the off-diagonal element of the dielectric tensor of GaMnAs

▼ [20a-S10-7] (Ga,Fe)Sb: a new p-type ferromagnetic semiconductor

▼ [20a-S10-8] Enhancement of ferromagnetism by manipulating the wavefunctions in n-type ferromagnetic semiconductor (In,Fe)As quantum wells

[20a-S10-9] 界面ナノ構造を利用したIV族半導体へのMn δドーピング

▼ [20a-S10-10] Fabrication and magnetic resonance of Ferromagnetic Chiral Meta-molecules

▲ [20a-S10-11] Magnetotransport properties of vertical spin valves of graphene/cobalt junctions

▼ [20a-S10-12] Observation of dark states in a superconductor diamond quantum hybrid system

セッション一覧

10．スピントロニクス・マグネティクス » 10.4 半導体・有機・光・量子スピントロニクス

[17p-S2-44~48] 10.4 半導体・有機・光・量子スピントロニクス

[17p-S2-44] 時間分解STMを用いた半導体電子スピンダイナミクス計測

▲ [17p-S2-45] A spin-rotation interferometer

▲ [17p-S2-46] The effect of F-doping on magnetism in diluted magnetic semiconductor (Zn,Co)O thin films

[17p-S2-47] MBE成長した三元化合物(Mn,Cr)Te薄膜の結晶構造と磁性

[17p-S2-48] 有機強誘電体P(VDF-TrFE)を用いたCe添加Si薄膜の伝導制御

[19p-S2-1~15] 10.4 半導体・有機・光・量子スピントロニクス

[19p-S2-1] Fe/AlOx電極による(110)GaAs QWへの室温高電流密度スピン注入

▲ [19p-S2-2] Spin injection from epitaxially grown Fe into an InAs quantum well

▼ [19p-S2-3] Electrical detection of nuclear magnetic resonance in GaAs using transient oblique Hanle signals

▼ [19p-S2-4] Observation of Reflection and Tunnel Effect in Photoinduced Spin Waves by Spatio-Temporally Resolved Imaging

▼ [19p-S2-5] Observation of spin relaxation in Be-doped InGaAsP by time-resolved pump and probe measurement (10-300 K)

△ [19p-S2-6] ポンププローブ反射計測によるBeドープGaAsのスピン緩和の観測

△ [19p-S2-7] 低温成長GaAsの伝導帯-カーボンアクセプター間遷移でのスピン緩和

▼ [19p-S2-8] Modulation of spin precession frequency by spin relaxation anisotropy in a (110) GaAs/AlGaAs quantum well

▲ [19p-S2-9] Detection of the exact persistent spin helix state using drift spin transport in GaAs quantum well

▼ [19p-S2-10] Determination of spin-orbit interaction coefficients under persistent and inverse persistent spin helix states in an InGaAs/InAlAs quantum well

▲ [19p-S2-11] Room temperature spin relaxation in InGaAs quantum wells

[19p-S2-12] Monte Carlo法に基づくInGaAs系量子井戸中スピン偏極の空間マッピング

[19p-S2-13] 顕微ポンプ・プローブ法による(110)InGaAs/InAlAs MQWの電子スピン緩和時間測定

▲ [19p-S2-14] Spin-injection dynamics via tunneling from InGaAs quantum wells into quantum dots; dependence of tunneling-barrier thickness

▲ [19p-S2-15] Magnetization Process of the n-type Ferromagnetic Semiconductor (In,Fe)As:Be Studied by X-ray Magnetic Circular Dichroism

[20a-S10-1~12] 10.4 半導体・有機・光・量子スピントロニクス

▼ [20a-S10-1] Structural analysis of group-IV-based ferromagnetic semiconductor GeFe by MeV-ion channeling

▲ [20a-S10-2] Origin of ferromagnetism in GaMnAs from a new theoretical viewpoint

▼ [20a-S10-3] Identification of impurity band and valence band in GaMnAs by tunneling anisotropic magnetoresistance spectroscopy

▲ [20a-S10-4] Study of Cr impurity states in diluted magnetic semiconductor (Zn,Cr)Te by STM/STS

▼ [20a-S10-5] Spin dynamics induced by linearly-polarized-pump lights in ferromagnetic semiconductor GaMnAs

▼ [20a-S10-6] Estimation of the off-diagonal element of the dielectric tensor of GaMnAs

▼ [20a-S10-7] (Ga,Fe)Sb: a new p-type ferromagnetic semiconductor

▼ [20a-S10-8] Enhancement of ferromagnetism by manipulating the wavefunctions in n-type ferromagnetic semiconductor (In,Fe)As quantum wells

[20a-S10-9] 界面ナノ構造を利用したIV族半導体へのMn δドーピング

▼ [20a-S10-10] Fabrication and magnetic resonance of Ferromagnetic Chiral Meta-molecules

▲ [20a-S10-11] Magnetotransport properties of vertical spin valves of graphene/cobalt junctions

▼ [20a-S10-12] Observation of dark states in a superconductor diamond quantum hybrid system

[19p-S2-1] Fe/AlO_x電極による(110)GaAs QWへの室温高電流密度スピン注入