Oral presentation

[18p-A20-1~6] 15.7 Fundamentals of epitaxy

Thu. Sep 18, 2014 1:15 PM - 2:45 PM A20 (E312)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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1:15 PM - 1:30 PM

[18p-A20-1] Effect of trench shapes on the strain release of epitaxial alumina

^○Michiko Yoshitake¹, Sinjiro Yagyu¹, Toyohiro Chikyow¹ (NIMS¹)

1:30 PM - 1:45 PM

[18p-A20-2] Relationship between surface supersaturation and vertical growth rate in GaAs microchannel epitaxy

^○Masafumi Tomita¹, Hiroyuki Takakura¹, Yosuke Mizuno¹, Muneki Iwakawa¹, Jumpei Yamada¹, Daisuke Kanbayashi¹, Takahiro Maruyama¹, Shigeya Naritsuka¹ (Meijo Univ.¹)

1:45 PM - 2:00 PM

[18p-A20-3] First-principles study on Mn-induced (nx2) reconstructions of the GaAs(001) surface

^○Atsushi Hagiwara¹, Akihiro Ohtake², Jun Nakamura¹ (The Univ. of Electro-Communications¹, NIMS²)

2:00 PM - 2:15 PM

[18p-A20-4] Ab initio-based approach to InAs(001)-(2×3) wetting layer surface

^○Tomonori Ito¹, Toru Akiyama¹, Kohji Nakamura¹ (Mie Univ.¹)

2:15 PM - 2:30 PM

[18p-A20-5] Doping effects on reconstruction and initial growth processes on InP(111)B surface

^○Masataka Kato¹, Toru Akiyama¹, Koji Nakamura¹, Tomonori Ito¹ (Mie Univ¹)

2:30 PM - 2:45 PM

[18p-A20-6] STMBE observation of QD formations around step structure on InAs wetting layer

^○Takashi Toujyou^1,2, Koichi Yamaguchi², Shiro Tsukamoto¹ (Anan Nat. Coll. Tech.¹, Univ. Electro-Commun.²)

Sessions

15. Crystal Engineering » 15.7 Fundamentals of epitaxy