Oral presentation

[19a-S1-1~13] 14.5/15.3/15.4 Code-sharing session

Fri. Sep 19, 2014 9:00 AM - 12:30 PM S1 (S1)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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9:00 AM - 9:15 AM

[19a-S1-1] Fabrication of triple junction InGaP/(In)AlGaAs/GaAs solar cells grown by MBE

^○(M1)Toru Mochiduki^1,2, Takeyoshi Sugaya¹, Kikuo Makita¹, Ryuji Oshima¹, Koji Matsubara¹, Shigeru Niki¹, Yoshinobu Okano² (AIST¹, TCU²)

9:15 AM - 9:30 AM

[19a-S1-2] InGaAs/GaAsP superlattice solar cells on vicinal substrates grown by low-temperature MOVPE using TEGa

^○Hiromasa Fujii¹, Yunpeng Wang², Hassanet Sodabanlu², Kentaroh Watanabe², Masakazu Sugiyama¹, Yoshiaki Nakano¹ (Tokyo Univ.¹, RCAST²)

9:30 AM - 9:45 AM

[19a-S1-3] In-situ X-ray diffraction study on effects of GaAs substrate tilted angle on strain relaxation processes in InGaAs

^○Daisuke Kodera¹, Takuo Sasaki², Masamitsu Takahashi², Itaru Kamiya¹, Yoshio Ohshita¹, Nobuaki Kojima¹, Masahumi Yamaguchi¹, Hidetoshi Suzuki³ (Toyota Tech. Inst.¹, JASRI², University of Miyazaki³)

9:45 AM - 10:00 AM

[19a-S1-4] Impurity Incorporation Processes in Si-doped GaAsN Thin Films Grown by Atomic Layer Epitaxy

^○Yuki Yokoyama¹, Tomohiro Haraguchi¹, Toshihiro Yamauchi¹, Hidetoshi Suzuki¹, Atsuhiko Fukuyama¹, Tetsuo Ikari¹ (Faculty of Engineering, Univ. of Miyazaki¹)

10:00 AM - 10:15 AM

△ [19a-S1-5] Improvement of carrier collection in GaInNAsSb solar cells with increased infrared absorber thicknesses

^○Naoya Miyashita¹, Nazmul Ahsan¹, Yoshitaka Okada¹ (RCAST, Univ. of Tokyo¹)

10:15 AM - 10:30 AM

[19a-S1-6] Energy Control of Intermediate Band structures in GaAs:N δ-doped Superlattices

^○Kazuki Osada¹, Tomoya Suzuki¹, Shuhei Yagi¹, Shunya Naito², Yasushi Shoji², Yoshitaka Okada², Yasuto Hijikata¹, Hiroyuki Yaguchi¹ (Saitama Univ.¹, RCAST, The Univ. of Tokyo²)

Break 10:30～10:45 （10:30 AM - 10:45 AM）

10:45 AM - 11:00 AM

[19a-S1-7] Structure change of N-H complex in GaAsN with anneal treatment

^○Koshiro Demizu¹, Kazuma Ikeda¹, Wang Li¹, Elleuch Omar¹, Nobuaki Kojima¹, Yoshio Ohshita¹, Masafumi Yamaguchi¹ (Toyota Tech. Inst.¹)

11:00 AM - 11:15 AM

[19a-S1-8] Polarization of N-H bonds during growth of GaAsN by chemical beam epitaxy

^○(PC)Kazuma Ikeda¹, Koushirou Demizu¹, Nobuaki Kojima¹, Yoshio Ohshita¹, Masafumi Yamaguchi¹ (TTI¹)

11:15 AM - 11:30 AM

[19a-S1-9] Optical properties of (InN)₁/(GaN)_n short-period superlattices: SMART structure

^○Daichi Imai^1,2,3, Kazuhide Kusakabe^1,2,3, Ke Wang^1,2,3, Akihiko Yoshikawa^1,2,3,4 (C-SMART GIR, Chiba Univ.¹, VBL, Chiba Univ.², JST-ALCA SMART Solar Cell PJ³, Kogakuin Univ.⁴)

11:30 AM - 11:45 AM

[19a-S1-10] Fabrication and Characterization of InGaN multiple quantum well solar cells

^○Yasuaki Arakawa¹, Kohei Ueno¹, Hidenari Noguchi¹, Jitsuo Ohta¹, Hiroshi Fujioka^1,2 (IIS, The Univ. of Tokyo¹, JST-CREST²)

11:45 AM - 12:00 PM

[19a-S1-11] Dependence of doping layers on photovoltaic property from strained p-i-n InGaN structure

^○Masatomo Sumiya^1,2, Toru Honda³, Liwen Sang¹, Yoshitaka Nakano⁴, Fumio Hasegawa⁴ (NIMS¹, JST-ALCA², Kougakuin Univ.³, Chubu Univ.⁴)

12:00 PM - 12:15 PM

[19a-S1-12] Effective In-composition Control in SMART Solar Cells by MOVPE

^○Kazuhide Kusakabe^1,2,3, Daichi Imai^1,2,3, Ke Wang^1,2,3, Akihiko Yoshikawa^1,2,3,4 (C-SGIR, Chiba Univ.¹, VBL, Chiba Univ.², JST-ALCA PJ, Chiba Univ.³, Kogakuin Univ.⁴)

12:15 PM - 12:30 PM

[19a-S1-13] Investigation of device structure in GaInN/GaN superlattice solar cells

^○(M2)Taiji Yamamoto¹, Hironori Kurokawa¹, Keiya Kozaki¹, Motoaki Iwaya¹, Satoshi Kamiyama¹, Tetsuya Takeuchi¹, Isamu Akasaki^1,2 (Fac. Sci. & Technol., Meijo Univ.¹, Akasaki Res. Cen., Nagoya Univ.²)

Sessions

Code-sharing session » 14.5/15.3/15.4 Code-sharing session