[19a-S1-1~13] 14.5/15.3/15.4 Code-sharing session

[19a-S1-11] Dependence of doping layers on photovoltaic property from strained p-i-n InGaN structure

^○Masatomo Sumiya^1,2, Toru Honda³, Liwen Sang¹, Yoshitaka Nakano⁴, Fumio Hasegawa⁴ (NIMS¹, JST-ALCA², Kougakuin Univ.³, Chubu Univ.⁴)

Keywords:III-V nitride solar cell