^○Seiya Ishihara¹, Kohei Suda¹, Naomi Sawamoto¹, Takumi Ohashi², Shinpei Yamaguchi², Kentarou Matsuura², Hitoshi Wakabayashi², Atsushi Ogura¹ (Meiji Univ.¹, Tokyo Tech.²)

3:00 PM - 3:30 PM

[18p-B3-6] Chemical vapor deposition for synthesis of layered-metal calcogenide: growth mechanism and spontaneous nano-structure formation

^○Takashi Yanase¹, Syo Watanabe¹, Yu Hashimoto², Dai Kutsuzawa², Taro Nagahama¹, Toshihiro Shimada¹ (Hokkaido Univ.¹, Hokkaido Univ.²)

Break 15:30～15:45 （3:30 PM - 3:45 PM）

3:45 PM - 4:15 PM

▲ [18p-B3-7] Growth and Application of 2D Transition Metal Dichalcogenides

^○Ming-Yang Li¹, Ang-Yu Lu¹, Chang-Lung Hsu¹, Jing-Kai Huang¹, Sheng-Han Su¹, Lain-Jong Li¹ (Academia Sinica¹)

4:15 PM - 4:30 PM

▲ [18p-B3-8] Interface electronic and transport properties in liquid-gated TMD thin flakes

^〇(PC)Wu Shi¹, Jianting Ye^1,2, Yijing Zhang¹, Ryuji Suzuki¹, Naoko Inoue¹, Yoshihiro Iwasa^1,3 (Univ. of Tokyo¹, Univ. of Groningen², RIKEN³)

4:30 PM - 4:45 PM

[18p-B3-9] Epitaxial growth of ultrathin MoSe2 films on GaAs (111)B substrates

^○Koji Onomitsu¹, Ryan Neufeld¹, Kazuhide Kumakura¹, Hideki Yamamoto¹ (NTT BRL¹)

4:45 PM - 5:15 PM

[18p-B3-10] Novel functional devices of large-area transition metal dichalcogenide monolayers

^○Taishi Takenobu^1,2 (Waseda Univ.¹, Waseda ZAIKEN²)

5:15 PM - 5:45 PM

[18p-B3-11] Electronic device application of liquid exfoliated MoS2 thin film

^○Eiko Mieda¹, Reiko Azumi², Satoru Shimada², Tetsuo Shimizu³, Atsushi Ando¹ (NeRI AIST¹, ESPRIT AIST², NRI AIST³)

5:45 PM - 6:00 PM

△ [18p-B3-12] Formation of hBN monolayers by nitration of ZrB(sub)2(sub) thin films on Si(111)

^○Kohei Aoyagi¹, Rainer Friedlein¹, Antoine Flerurence¹, Florian Gimbert¹, Taisuke Ozaki^1,2, Yukiko Yamada-Takamura¹ (School of Materials Science JAIST¹, ISSP The University of Tokyo²)

6:00 PM - 6:15 PM

△ [18p-B3-13] Electrical Characterization of Dielectric Breakdown of h-BN

^○Yoshiaki Hattori¹, Takashi Taniguchi², Kenji Watanabe², Kosuke Nagashio¹ (Tokyo Univ.¹, NIMS²)

6:15 PM - 6:30 PM

[18p-B3-14] Closing Remarks: Prospects of Functional Atomic Thin Film Research

^○Atsushi Ando¹ (AIST¹)

Sessions

Symposium » Present and Future of Functional atomic thin film research

[18p-B3-1~14] Present and Future of Functional atomic thin film research

[18p-B3-1] Opening

[18p-B3-2] Basic properties and thin film preparation methods of transition metal dichalcogenides

[18p-B3-3] Photoluminescence Study of Monolayer WS2 Grain Boundary

[18p-B3-4] Optical Science in Atomically-thin Layered Materials

△ [18p-B3-5] Evaluation of High-Temperature Sputter-deposited MoS₂ Film by Raman Spectroscopy

[18p-B3-6] Chemical vapor deposition for synthesis of layered-metal calcogenide: growth mechanism and spontaneous nano-structure formation

▲ [18p-B3-7] Growth and Application of 2D Transition Metal Dichalcogenides

▲ [18p-B3-8] Interface electronic and transport properties in liquid-gated TMD thin flakes

[18p-B3-9] Epitaxial growth of ultrathin MoSe2 films on GaAs (111)B substrates

[18p-B3-10] Novel functional devices of large-area transition metal dichalcogenide monolayers

[18p-B3-11] Electronic device application of liquid exfoliated MoS2 thin film

△ [18p-B3-12] Formation of hBN monolayers by nitration of ZrB(sub)2(sub) thin films on Si(111)

△ [18p-B3-13] Electrical Characterization of Dielectric Breakdown of h-BN

[18p-B3-14] Closing Remarks: Prospects of Functional Atomic Thin Film Research

Sessions

Symposium » Present and Future of Functional atomic thin film research

[18p-B3-1~14] Present and Future of Functional atomic thin film research

△ [18p-B3-5] Evaluation of High-Temperature Sputter-deposited MoS2 Film by Raman Spectroscopy

▲ [18p-B3-7] Growth and Application of 2D Transition Metal Dichalcogenides

▲ [18p-B3-8] Interface electronic and transport properties in liquid-gated TMD thin flakes

△ [18p-B3-12] Formation of hBN monolayers by nitration of ZrB(sub)2(sub) thin films on Si(111)

△ [18p-B3-13] Electrical Characterization of Dielectric Breakdown of h-BN

△ [18p-B3-5] Evaluation of High-Temperature Sputter-deposited MoS₂ Film by Raman Spectroscopy