Suppression mechanism of polytype transformation during high-quality 4H-SiC growth

Presentation information

Oral presentation

15. Crystal Engineering » 15.6 IV-group-based compounds

Wed. Sep 17, 2014 9:00 AM - 12:30 PM A17 (E308)

9:15 AM - 9:30 AM

^○Shunta Harada¹, Yuji Yamamoto¹, Kenta Murayama¹, Kenta Aoyagi¹, Takenobu Sakai¹, Miho Tagawa¹, Toru Ujihara¹ (Nagoya Univ.¹)

Keywords:SiC,転位,溶液成長