Oral presentation

[17a-A17-1~13] 15.6 IV-group-based compounds

Wed. Sep 17, 2014 9:00 AM - 12:30 PM A17 (E308)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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9:00 AM - 9:15 AM

[17a-A17-1] Unsteady thermodynamic analysis of the polytype stability in PVT growth of SiC using 2D nucleation theory

^○(M2)Seido Araki¹, Bing Gao², Satoshi Nakano², Shin-ichi Nishizawa³, Koichi Kakimoto^1,2 (Kyushu Univ.¹, RIAM, Kyushu Univ.², AIST³)

9:15 AM - 9:30 AM

[17a-A17-2] Suppression mechanism of polytype transformation during high-quality 4H-SiC growth

^○Shunta Harada¹, Yuji Yamamoto¹, Kenta Murayama¹, Kenta Aoyagi¹, Takenobu Sakai¹, Miho Tagawa¹, Toru Ujihara¹ (Nagoya Univ.¹)

9:30 AM - 9:45 AM

▲ [17a-A17-3] The investigation of step structure with different TSDs conversion behavior during 4H-SiC solution growth

^○Shiyu Xiao¹, Natsumi Hara¹, Shunta Harada¹, Toru Ujihara¹ (Nagoya University¹)

9:45 AM - 10:00 AM

△ [17a-A17-4] Influence of seed crystal shape on surface morphology and threading screw dislocation conversion during solution growth of SiC

^○Daiki Koike¹, Tomonori Umezaki¹, Shunta Harada¹, Miho Tagawa¹, Takenobu Sakai¹, Toru Ujihara¹ (Nagoya Univ.¹)

10:00 AM - 10:15 AM

[17a-A17-5] Epitaxial growth on 4H-SiC substrates grown by solution growth technique

^○Akinori Seki¹, Katsunori Danno¹, Hironori Daikoku¹, Takayuki Shirai¹, Kazuaki Satoh¹, Takeshi Bessho¹ (Toyota Motor Corp.¹)

10:15 AM - 10:30 AM

[17a-A17-6] Diffusion mechanisms of transition metals in 4H-SiC

^○Katsunori Danno¹, Akinori Seki¹, Makoto Saito¹, Takayuki Shirai¹, Hiroshi Suzuki¹, Hidemitsu Sakamoto¹, Kazuaki Sato¹, Takeshi Bessho¹, Tsunenobu Kimoto² (Toyota Motor Corp.¹, Kyoto Univ.²)

10:30 AM - 10:45 AM

[17a-A17-7] Characterization of transition metals in 4H-SiC epilayers on substrates fabricated by solution growth

Break 10:45～11:00 （10:45 AM - 11:00 AM）

11:00 AM - 11:15 AM

△ [17a-A17-8] Reduction of stacking fault density in growth of 1° off-angle 4H-SiC Si-face epitaxial layers

^○Keiko Masumoto^1,2, Hirokuni Asamizu^1,3, Kentaro Tamura^1,3, Chiaki Kudou^1,4, Johji Nishio^1,5, Kazutoshi Kojima^1,2, Toshiyuki Ohno^1,6, Hajime Okumura^1,2 (FUPET¹, AIST², ROHM³, Panasonic⁴, Toshiba⁵, Hitachi⁶)

11:15 AM - 11:30 AM

[17a-A17-9] Reduction of surface defects of epitaxial layer grown on 2°-off Si-face 4H-SiC

^○Hirokuni Asamizu^1,2, Chiaki Kudou^1,3, Sachiko Ito^1,4, Keiko Masumoto^1,4, Johji Nisio^1,5, Kentaro Tamura^1,2, Kojima Kazutoshi^1,4, Toshiyuki Ohno^1,6 (FUPET¹, Rohm Co., Ltd.², Panasonic Corp.³, AIST⁴, Toshiba Corp.⁵, Hitachi Ltd.⁶)

11:30 AM - 11:45 AM

[17a-A17-10] Uniformity improvement in carrier concentration on 150 mm diameter C-face epitaxy of 4H-SiC

^○Johji Nishio^1,2, Hirokuni Asamizu^1,3, Chiaki Kudou^1,4, Sachiko Ito⁵, Keiko Masumoto^1,5, Kentaro Tamura^1,3, Kazutoshi Kojima^1,5, Toshiyuki Ohno^1,6 (FUPET¹, Toshiba², ROHM³, Panasonic⁴, AIST⁵, Hitachi⁶)

11:45 AM - 12:00 PM

[17a-A17-11] Effective C/Si ratio changes in SiC epitaxial film growth using a horizontal CVD

^○Chiaki Kudou^1,2, Keiko Masumoto^1,5, Hirokuni Asamizu^1,3, Kentaro Tamura^1,3, Johji Nishio^1,4, Kazutoshi Kojima^1,5, Toshiyuki Ohno^1,6 (FUPET¹, Panasonic², ROHM³, Toshiba⁴, AIST⁵, Hitachi⁶)

12:00 PM - 12:15 PM

[17a-A17-12] Periodic surface nanostructures on SiC(0001) with different vicinal angles.

^○Kouhei Fukuma¹, Satosi Hanaki¹, Kajiwara Takashi¹, Anton Visikovskiy¹, Satoru Tanaka¹ (Kyushu Univ.¹)

12:15 PM - 12:30 PM

[17a-A17-13] SiC Heteroepitaxial Growth on AlN/Si by Pulsed Laser Deposition

^○Kazuki Meguro¹, Tsugutada Narita¹, Toshihiro Uemura¹, Hideki Nakazawa¹ (Hirosaki Univ.¹)

Oral presentation

[17p-A17-1~14] 15.6 IV-group-based compounds

Wed. Sep 17, 2014 2:00 PM - 6:00 PM A17 (E308)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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Lunch 12:30～14:00 （12:30 PM - 2:00 PM）

2:00 PM - 2:15 PM

[17p-A17-1] [Young Scientist Oral Presentation Award Speech]（15min.）
Application of Non-relaxation Method for the Threshold Voltage Instability under Gate Stress to 4H-SiC (0001) MOSFET with N2O Oxidation

^○Mitsuru Sometani^1,2, Dai Okamoto¹, Shinsuke Harada¹, Hitoshi Ishimori¹, Shinji Takasu¹, Tetsuo Hatakeyama¹, Manabu Takei², Kazutoshi Kojima¹, Yoshiyuki Yonezawa¹, Kenji Fukuda¹ (AIST ADPERC¹, Fuji Electric²)

2:15 PM - 2:30 PM

[17p-A17-2] Proposal of Method for Quantitative Characterization of Slow Traps in SiC MOS Capacitors from Transient Capacitance Measurements

^○Yuki Fujino¹, Richard Heihachiro Kikuchi¹, Hirohisa Hirai¹, Koji Kita^1,2 (The Univ. of Tokyo¹, JST-PRESTO²)

2:30 PM - 2:45 PM

[17p-A17-3] Transient response characteristic of SiC-MOSFETs

^○Junji Senzaki^1,2, Hironori Yoshioka^1,2, Atsushi Shimozato², Yusuke Kobayashi¹, Keiko Ariyoshi¹, Takahito Kojima¹, Shinsuke Harada^1,2, Yasunori Tanaka^1,2, Hajime Okumura^1,2 (FUPET¹, AIST²)

2:45 PM - 3:00 PM

[17p-A17-4] Effect of surface defects in 4H-SiC epitaxial films on the gate oxide reliability

^○Osamu Ishiyama^1,3, Keiichi Yamada^1,4, Junji Senzaki^1,2, makoto Kitabatake^1,3 (FUPET¹, AIST², Panasonic Corp.³, Toray Research Center Inc.⁴)

3:00 PM - 3:15 PM

[17p-A17-5] Reliability improvement in Gate Silicon Dioxide even on Silicon Carbide

^○Masashi Minami¹ (PHNITEC SEMICONDUCTOR¹)

Break 15:15～15:30 （3:15 PM - 3:30 PM）

3:30 PM - 3:45 PM

△ [17p-A17-6] Evaluation method of the gate dielectric reliability under negative gate bias with the ultraviolet irradiation for supplying hole to SiC MOS capacitors

^○Teruyuki Ohashi¹, Ryosuke Iijima¹, Kazuto Takao¹ (Corporate R&D Center, Toshiba Corp.¹)

3:45 PM - 4:00 PM

△ [17p-A17-7] Critical Electric Field in Ion Irradiated 4H-SiC MOSFETs

^○Manato Deki^1,2, Takahiro Makino², Takuro Tomita¹, Kazutoshi Kojima³, Takeshi Ohshima² (The Univ. of Tokushima¹, JAEA², AIST³)

4:00 PM - 4:15 PM

[17p-A17-8] Interface properties of 4H-SiC MOS fabricated on the C-face in NF3-added O2 ambient

^○Kohei Hanasato¹, Takashi Hasunuma¹, Kikuo Ymabe¹ (Univ. of Tsukuba¹)

4:15 PM - 4:30 PM

[17p-A17-9] Wet oxidation of Si thin film on SiC substrates and stability of interfacial structure

^○(PC)Jianbo Liang¹, Tomohiro Hayashi¹, Syouta Nisida¹, Masasi Morimoto¹, Naoteru Shigekawa¹, Mnabu Arai² (Osaka City University¹, New Japan Radio Co., Ltd²)

4:30 PM - 4:45 PM

[17p-A17-10] Gate Stack Fabrication on n-type 3C-SiC at Low Temperature

^○Yusuke Yamamoto¹, Ryosuke Murayama¹, Keisuke Yamamoto², Dong Wang¹, Hiroshi Nakashima², Shigeomi Hishiki³, Keisuke Kawamura³ (I-Eggs Kyushu Univ¹, KASTEC Kyushu Univ², Air Water R & D Co., Ltd³)

Break 16:45～17:00 （4:45 PM - 5:00 PM）

5:00 PM - 5:15 PM

△ [17p-A17-11] Nitrogen Doping in 4H-SiC by Laser Irradiation in Nitrogen Plasma at Atmospheric Pressure

^○Ryota Kojima¹, Hiroshi Ikenoue¹, Yosuke Watanabe¹, Akihiro Ikeda¹, Daisuke Nakamura¹, Tanemasa Asano¹, Tatsuo Okada¹ (Kyushu Univ.¹)

5:15 PM - 5:30 PM

[17p-A17-12] Nitrogen Doping of 4H-SiC by KrF Excimer Laser Irradiation in Liquid Nitrogen

^○Daichi Marui¹, Akihiro Ikeda¹, Hiroshi Ikenoue¹, Tanemasa Asano¹ (Kyushu Univ.¹)

5:30 PM - 5:45 PM

[17p-A17-13] Schottky diode characteristics of TiC and TiSi2 electrodes on SiC substrates

^○Tomoyuki Suzuki¹, Mari Okamoto², Osamu Munekiyo², Kuniyuki Kakushima², Yoshinori Kataoka², Akira Nishiyama², Nobuyuki Sugii², Hitoshi Wakabayashi², Kazuo Tsutsui², Kenji Natori¹, Hiroshi Iwai¹ (Tokyo Tech. FRC¹, IGSSE²)

5:45 PM - 6:00 PM

[17p-A17-14] Evaluation of the Deep Level in 4H-SiC Schottky Barrier Diode by Alpha Particle Induced Charge Transient Spectroscopy

^○(M1)Yuya Kambayashi^1,2, Shinobu Onoda², Naoya Iwamoto², Wataru Kada¹, Takahiro Makino², Norihiro Hoshino³, Hidekazu Tsuchida³, Takeshi Ohshima², Tomihiro Kamiya², Osamu Hanaizumi¹ (Gunma Univ.¹, JAEA², CRIEPI³)

Oral presentation

[18a-A17-1~13] 15.6 IV-group-based compounds

Thu. Sep 18, 2014 9:00 AM - 12:30 PM A17 (E308)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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9:00 AM - 9:15 AM

[18a-A17-1] [JSAP Young Scientist Award Speech]（15min.）
Improvement of Carrier Lifetimes in Highly Al-Doped p-Type 4H-SiC Epitaxial Layers by Hydrogen Passivation

^○Takafumi Okuda (Kyoto University)

9:15 AM - 9:30 AM

[18a-A17-2] Search of Defect Centers Acting as Single Photon Source in Silicon Carbide

^○Takeshi Ohshima¹, Shinobu Onoda¹, Takahiro Makino¹, Naoya Iwamoto¹, Brett Johnson², Alex Lohrmann², T Karle², Jeffrey McCallum², Stefania Castelletto³, Takahide Umeda⁴, Yoshihiro Sato⁴, Yuwei Zhu⁴, V Ivady⁵, Adam Gali⁵, Moriyoshi Haruyama^1,6, Wataru Kada⁶, Osamu Hanaizumi⁶ (JAEA¹, Univ. Melbourne², RMIT Univ.³, Univ. Tsukuba⁴)

9:30 AM - 9:45 AM

▲ [18a-A17-3] Evaluation of stacking faults in 4H-SiC single crystal by using KOH etching on non-polar {1-100} face and cathodoluminescence

^○Yongzhao Yao¹, Yukari Ishikawa¹, Yoshihiro Sugawara¹, Koji Sato¹, Takayuki Shirai², Katsunori Danno², Hidemitsu Sakamoto², Kazuaki Sato², Takeshi Bessho², Benjamin Dierre³, Kentaro Watanabe³, Takashi Sekiguchi³ (JFCC¹, Toyota Motor Corporation², NIMS³)

9:45 AM - 10:00 AM

[18a-A17-4] Analysis of screw dislocation in 4H-SiC by molecular dynamics

^○(M2)Mitsutoshi Mizutani¹, Takahiro Kawamura¹, Yasuyuki Suzuki¹, Yoshihiro Kangawa², Koichi Kakimoto² (Mie Univ.¹, RIAM, Kyushu Univ.²)

10:00 AM - 10:15 AM

[18a-A17-5] Observation of pair structure of threading dislocation and nano-groove in 4H-SiC wafer by mirror projection electron microscopy

^○Toshiyuki Isshiki¹, Masaki Hasegawa² (Kyoto Inst. Tech.¹, Hitachi, Central Research Lab.²)

10:15 AM - 10:30 AM

[18a-A17-6] Partial Dislocation Motion in 4H-SiC Associated with Stacking Fault Expansion and Contraction

^○Yoshifumi Yamashita¹, Takuya Shimomura¹, Takeshi Nishikawa¹, Yasuhiko Hayashi¹ (Okayama Univ.¹)

10:30 AM - 10:45 AM

[18a-A17-7] Characterization of stacking faults in 4H-SiC epilayers by X-ray topography

^○Kengo Noami¹, Tetsuya Nagai¹, Katsuhiko Nakai¹, Toshiro Futagi¹ (NSST¹)

Break 10:45～11:00 （10:45 AM - 11:00 AM）

11:00 AM - 11:15 AM

[18a-A17-8] Spectral response of SiC photoelectrodes

^○Masashi Kato¹, Keiko Miyake¹, Masaya Ichimura¹ (Nagoya Inst. of Tech.¹)

11:15 AM - 11:30 AM

[18a-A17-9] Defect characterization for p-type SiC epilayers toward photoelectrode application

^○Masashi Kato¹, Yoshitaka Nakano² (Nagoya Inst. of Tech.¹, Chubu Univ.²)

11:30 AM - 11:45 AM

[18a-A17-10] An ab initio analysis on elementary process in water-splitting reaction at 3C-SiC surface

^○Kazuhiro Shinn-ike¹, Kenji Tsuruta¹, Atsushi Ishikawa¹ (Okayama Univ.¹)

11:45 AM - 12:00 PM

△ [18a-A17-11] p-type 3C-SiC photo-electrodes for stable and high efficient water splitting

^○Shunnosuke Akabane¹, Jun Tae Song¹, Renato Goes Amici¹, Keiko Miyake², Masashi Kato², Takayuki Iwasaki¹, Mutsuko Hatano¹ (Tokyo tech¹, Tokyo Inst. of Tech²)

12:00 PM - 12:15 PM

▼ [18a-A17-12] Photoelectrochemical CO₂ reduction on 3C-SiC photo-anode

^〇Jun Tae Song, Shunnosuke Akabane, Renato Goes Amici, Takayuki Iwasaki, Mutsuko Hatano (Tokyo Inst. of Tech.)

12:15 PM - 12:30 PM

[18a-A17-13] Study on light irradiation effect in the anodic process of SiC

^○(M1)Kimitaka Hidaka¹, Kazuki Watari¹, Motoaki Iwaya¹, Satoshi Kamiyama¹, Isamu Akasaki^1,2 (Meijo Univ.¹, Akasaki Research Center Nagoya Univ.²)

Oral presentation

[18p-A17-1~12] 15.6 IV-group-based compounds

Thu. Sep 18, 2014 2:00 PM - 5:15 PM A17 (E308)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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Lunch 12:30～14:00 （12:30 PM - 2:00 PM）

2:00 PM - 2:15 PM

[18p-A17-1] Interface reaction analysis of La2O3/SiN upon SiC substrate by ATR-FTIR

^○Yiming Lei¹, Shu Munekiyo¹, Kuniyuki Kakushima², Takamasa Kawanago², Yoshinori Kataoka², Akira Nishiyama², Nobuyuki Sugii², Hitoshi Wakabayash², Kazuo Tsutsui², Satoshi Yamakawa³, Hiroshi Iwai¹, Masayuki Huruhashi³, Naruhisa Miura³, Kenji Natori¹ (Tokyo Tech. FRC¹, Tokyo Tech. IGSSE², Mitsubishi Electric Corp.³)

2:15 PM - 2:30 PM

[18p-A17-2] Electronic States at Ultrathin SiO₂/SiC Interface measured by Total Photoelectron Yield Spectroscopy

^○Akio Ohta¹, Daichi Takeuchi², Truyen Nguyen Xuan², Katsunori Makihara², Seiichi Miyazaki² (Nagoya Univ. VBL¹, Nagoya Univ.²)

2:30 PM - 2:45 PM

[18p-A17-3] Theoretical Investigation for Initial Oxidation Processes on SiC Surfaces

^○Ayako Ito¹, Toru Akiyama¹, Kohji Nakamura¹, Tomonori Ito¹, Kenji Shiraishi², Hiroyuki Kageshima³, Masashi Uematsu⁴ (Mie Univ.¹, Nagoya Univ.², Shimane Univ.³, Keio Univ.⁴)

2:45 PM - 3:00 PM

[18p-A17-4] Nitrogen doping level in nitrided 4H-SiC MOS structures studied by electron spin resonance

^○Takahide Umeda¹, Yoshihiro Sato¹, Yuuki Sakuma², Ryouji Kosugi² (Univ. of Tsukuba¹, AIST²)

3:00 PM - 3:15 PM

△ [18p-A17-5] Role of water molecules in thermal oxidation of 4H-SiC(0001) substrates

^○Daisuke Nagai¹, Takuji Hosoi¹, Takayoshi Shimura¹, Heiji Watanabe¹ (Osaka Univ.¹)

3:15 PM - 3:30 PM

△ [18p-A17-6] Cathodoluminescence study of thermally-grown SiO₂ /SiC structures

^○Yuta Fukushima¹, Furkan Alan¹, Naoki Higuchi¹, Atthawut Chanthaphan¹, Takuji Hosoi¹, Takayoshi Shimura¹, Heiji Watanabe¹ (Osaka Univ.¹)

3:30 PM - 3:45 PM

△ [18p-A17-7] DLTS Study of SiC-MOSFET Interface Traps Following Oxidation After Nitridation

^○Junichi Hasegawa¹, Takeru Suto¹, Takayuki Iwasaki¹, Tetsuo Kodera¹, Masayuki Furuhashi², Munetaka Noguchi², Shuhei Nakata², Tadashi Nishimura¹, Mutsuko Hatano¹ (Tokyo Tech Univ.¹, Mitsubishi Electric Corp.²)

Break 15:45～16:00 （3:45 PM - 4:00 PM）

4:00 PM - 4:15 PM

[18p-A17-8] Room Temperature Process for Producing Silicon Carbide Thin Film on Silicon Surface

Azumi Hirooka¹, Kohei Shioda¹, Masaki Tsuji¹, ^○Hitoshi Habuka¹ (Yokohama National Univ.¹)

4:15 PM - 4:30 PM

[18p-A17-9] Room Temperature Process for Producing Silicon Carbide Thin Film on Aluminium Surface

^○Asumi Hirooka¹, Kohei Shioda¹, Masaki Tsuji¹, Hitoshi Habuka¹ (Yokohama National Univ.¹)

4:30 PM - 4:45 PM

[18p-A17-10] ClF3 Resistant Film Production Method (2)

^○Hitomi Matsuda¹, Hitoshi Habuka¹, Yuuki Ishida¹, Toshiyuki Ohno¹ (Yokohama National Univ.¹)

4:45 PM - 5:00 PM

[18p-A17-11] Erching Rate Behavior of SiC Wafer Using ClF₃ Gas

^○Ken Nakagomi¹, Dairi Yajima¹, Hitoshi Habuka¹, Tomohisa Kato² (Yokohama National Univ.¹, AIST²)

5:00 PM - 5:15 PM

[18p-A17-12] SiC Epitaxial Reactor Cleaning Method Using Chlorine Trifluoride Gas (2)

^○Kosuke Mizuno¹, Yusuke Fukumoto¹, Hitoshi Habuka¹, Yuuki Ishida², Toshiyuki Ohno³ (Yokohama National University¹, AIST², FUPET³)

Poster presentation

[19a-PB5-1~17] 15.6 IV-group-based compounds

Fri. Sep 19, 2014 9:30 AM - 11:30 AM PB5 (Gymnasium2)

ポスター掲示時間9:30～11:30(PB5会場)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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9:30 AM - 11:30 AM

[19a-PB5-1] Rapid Growth of SiC Films on Si Substrates Covered with Natural Oxide Using Monomethylsilane

^○Yuzuru Narita¹, Shinpei Yamada¹, Masanobu Takano¹, Takafumi Hayao¹, Kensuke Nakajima¹, Maki Suemitsu² (Yamagata Univ.¹, RIEC, Tohoku Univ.²)

9:30 AM - 11:30 AM

[19a-PB5-2] Analysis of Dislocations in SiC Using Multi Directional STEM Method

^○Takahiro Sato¹, Yoshihiro Ohtsu², Yoshihisa Ohrai¹, Toshiyuki Isshiki³, Munetoshi Fukui¹ (Hitachi High-Technologies corporation¹, Hitachi High-Tech Manufacturing & Service corporation², Kyoto Institute of Technology³)

9:30 AM - 11:30 AM

[19a-PB5-3] Surface characterization of 6H-SiC substrate irradiated by femtosecond laser

^○Reina Miyagawa¹, Junsuke Okamoto¹, Osamu Eryu¹ (Nagoya Inst. of Tech.¹)

9:30 AM - 11:30 AM

[19a-PB5-4] Dicing of SiC wafer by PCVM with a shadow mask

^○Yu Okada¹, Kouki Tajiri¹, Yasuhisa Sano¹, Satoshi Matsuyama¹, Kazuto Yamauchi¹ (Osaka Univ.¹)

9:30 AM - 11:30 AM

[19a-PB5-5] Crystalline Evaluation of Phosphorus-implanted 4H-SiC Layer by Color Definition of EBSD Pattern

^○Hiroaki Hanafusa¹, Keisuke Maruyama¹, Shohei Hayashi¹, Seiichiro Higashi¹ (Hiroshima Univ.¹)

9:30 AM - 11:30 AM

[19a-PB5-6] Correlation between Impurity Activation and Cooling Rate during Thermal Plasma Jet Annealing of 4H-SiC

^○Keisuke Maruyama¹, Hiroaki Hanafusa¹, Hideki Murakami¹, Shohei Hayashi¹, Seiichiro Higashi¹ (Graduate School of Advanced Sciences of Matter, Hiroshima University¹)

9:30 AM - 11:30 AM

[19a-PB5-7] Improvement of Deposited SiO₂ films on 4H-SiC by Thermal-Plasma-Jet Annealing

^○Ryosuke Ishimaru¹, Hiroaki Hanafusa¹, Keisuke Maruyama¹, Yukitaka Hiromatsu¹, Shohei Hayashi¹, Seiichiro Higashi¹ (Graduate School of Advanced Sciences of Matter, Hiroshima Univ.¹)

9:30 AM - 11:30 AM

[19a-PB5-8] Electrical Characteristics of TEOS-SiO₂ Films Deposited on SiC

^○kanta maeda¹, ryu hasunuma¹, kikuo yamabe¹ (Tsukuba Univ.¹)

9:30 AM - 11:30 AM

[19a-PB5-9] Carbon Desorption in SiC Thermal Oxide film by NF₃ added Oxidation

^○(M2)Masahito Nagoshi¹, Ryu hasunuma¹, Kikuo Yamabe¹ (University of Tsukuba¹)

9:30 AM - 11:30 AM

[19a-PB5-10] Depth Profile of Thermal Oxide Film Density on SiC

^○Mariko Hayashi¹, Ryu Hasunuma¹, Kikuo Yamabe¹ (Univ. of Tsukuba¹)

9:30 AM - 11:30 AM

[19a-PB5-11] Variation of oxide growth rate by introducing Ar annealing to oxidation of SiC

^○Ryotaro Konno¹, Shuhei Yagi¹, Yasuto Hijikata¹, Hiroyuki Yaguchi¹ (Saitama Univ.¹)

9:30 AM - 11:30 AM

[19a-PB5-12] Dynamical Simulations and First-Principles Analyses of Oxidation Processes on 4H-SiC(0001) Surfaces

^○Takahiro Yamasaki^1,2, Hiroshi Koyama^2,3, Jun Nara^1,2, Tasuo Schimizu⁴, Koichi Kato⁴, Takahisa Ohno^1,2,5 (NIMS¹, MARCEED², RIST³, Toshiba R&D Center⁴, IIS, Univ. of Tokyo⁵)

9:30 AM - 11:30 AM

[19a-PB5-13] Elucidation of the initial oxidation process of 4H-SiC by AR-XPS study (Ⅱ)

^○Tomoya Sasago¹, Jin Arai¹, Hiroshi Nohira¹ (TCU¹)

9:30 AM - 11:30 AM

[19a-PB5-14] Effects of UV and Ozone Radical Treatments on 4H-SiC Thermal Oxide Film

^○Tadashi Sato¹, Shin-Ichiro Kuroki¹, Seiji Ishikawa², Tomonori Maeda², Hiroshi Sezaki², Takamaro Kikkawa¹ (RNBS, Hiroshima Univ.¹, Phenitec Semicon²)

9:30 AM - 11:30 AM

[19a-PB5-15] Study of anomalous charge collection mechanisms in 4H-SiC SBD

^○Takahiro Makino¹, Manato Deki², Shinobu Onoda¹, Norihiro Hoshino³, Hidekazu Tsuchida³, Takeshi Ohshima¹ (JAEA¹, Tokushima Univ.², CRIEPI³)

9:30 AM - 11:30 AM

[19a-PB5-16] Low Resistivity SiC-SBD with Optimized Doping Profile of Drift Layer

^○Takaaki Tominaga¹, Akihiro Koyama¹, Takanori Tanaka¹, Hiroshi Watanabe¹, Nobuyuki Tomita¹, Satoshi Yamakawa¹ (Mitsubishi Electric¹)

9:30 AM - 11:30 AM

[19a-PB5-17] Stability of the Electrical Characteristics of SiC-MOSFETs irradiated with Gamma-rays

^○Takashi Yokoseki^1,2, Takahiro Makino², Hiroshi Abe², Shinobu Onoda², Takeshi Ohshima², Yuki Tanaka³, Mikio Kandori³, Toru Yoshie³, Yasuto Hijikata¹ (Saitama Univ.¹, JAEA², Sanken Electric Co., Ltd.³)

Sessions

15. Crystal Engineering » 15.6 IV-group-based compounds

[17a-A17-1~13] 15.6 IV-group-based compounds

▲ [17a-A17-3] The investigation of step structure with different TSDs conversion behavior during 4H-SiC solution growth

△ [17a-A17-4] Influence of seed crystal shape on surface morphology and threading screw dislocation conversion during solution growth of SiC

△ [17a-A17-8] Reduction of stacking fault density in growth of 1° off-angle 4H-SiC Si-face epitaxial layers

[17p-A17-1~14] 15.6 IV-group-based compounds

△ [17p-A17-6] Evaluation method of the gate dielectric reliability under negative gate bias with the ultraviolet irradiation for supplying hole to SiC MOS capacitors

△ [17p-A17-7] Critical Electric Field in Ion Irradiated 4H-SiC MOSFETs

△ [17p-A17-11] Nitrogen Doping in 4H-SiC by Laser Irradiation in Nitrogen Plasma at Atmospheric Pressure

[18a-A17-1~13] 15.6 IV-group-based compounds

▲ [18a-A17-3] Evaluation of stacking faults in 4H-SiC single crystal by using KOH etching on non-polar {1-100} face and cathodoluminescence

△ [18a-A17-11] p-type 3C-SiC photo-electrodes for stable and high efficient water splitting

▼ [18a-A17-12] Photoelectrochemical CO2 reduction on 3C-SiC photo-anode

[18p-A17-1~12] 15.6 IV-group-based compounds

△ [18p-A17-5] Role of water molecules in thermal oxidation of 4H-SiC(0001) substrates

△ [18p-A17-6] Cathodoluminescence study of thermally-grown SiO2 /SiC structures

△ [18p-A17-7] DLTS Study of SiC-MOSFET Interface Traps Following Oxidation After Nitridation

[19a-PB5-1~17] 15.6 IV-group-based compounds

▼ [18a-A17-12] Photoelectrochemical CO₂ reduction on 3C-SiC photo-anode

△ [18p-A17-6] Cathodoluminescence study of thermally-grown SiO₂ /SiC structures