[17p-A17-1~14] 15.6 IV-group-based compounds

[17p-A17-4] Effect of surface defects in 4H-SiC epitaxial films on the gate oxide reliability

^○Osamu Ishiyama^1,3, Keiichi Yamada^1,4, Junji Senzaki^1,2, makoto Kitabatake^1,3 (FUPET¹, AIST², Panasonic Corp.³, Toray Research Center Inc.⁴)

Keywords:4H-SiC