[17p-A17-1~14] 15.6 IV-group-based compounds

[17p-A17-3] Transient response characteristic of SiC-MOSFETs

^○Junji Senzaki^1,2, Hironori Yoshioka^1,2, Atsushi Shimozato², Yusuke Kobayashi¹, Keiko Ariyoshi¹, Takahito Kojima¹, Shinsuke Harada^1,2, Yasunori Tanaka^1,2, Hajime Okumura^1,2 (FUPET¹, AIST²)

Keywords:炭化ケイ素,MOSFET,過渡応答