The 75th JSAP Autumn Meeting, 2014

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Oral presentation

15. Crystal Engineering » 15.6 IV-group-based compounds

[17p-A17-1~14] 15.6 IV-group-based compounds

Wed. Sep 17, 2014 2:00 PM - 6:00 PM A17 (E308)

5:15 PM - 5:30 PM

[17p-A17-12] Nitrogen Doping of 4H-SiC by KrF Excimer Laser Irradiation in Liquid Nitrogen

○Daichi Marui1, Akihiro Ikeda1, Hiroshi Ikenoue1, Tanemasa Asano1 (Kyushu Univ.1)

Keywords:SiC,ドーピング