Characterization of transition metals in 4H-SiC epilayers on substrates fabricated by solution growth

Katsunori Danno

Presentation information

Oral presentation

15. Crystal Engineering » 15.6 IV-group-based compounds

[17a-A17-1~13] 15.6 IV-group-based compounds

Wed. Sep 17, 2014 9:00 AM - 12:30 PM A17 (E308)

10:30 AM - 10:45 AM

[17a-A17-7] Characterization of transition metals in 4H-SiC epilayers on substrates fabricated by solution growth

^○Katsunori Danno¹, Akinori Seki¹, Makoto Saito¹, Takayuki Shirai¹, Hiroshi Suzuki¹, Hidemitsu Sakamoto¹, Kazuaki Sato¹, Takeshi Bessho¹, Tsunenobu Kimoto² (Toyota Motor Corp.¹, Kyoto Univ.²)

Keywords:SiC,拡散

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