[17a-A17-1~13] 15.6 IV-group-based compounds

△ [17a-A17-8] Reduction of stacking fault density in growth of 1° off-angle 4H-SiC Si-face epitaxial layers

^○Keiko Masumoto^1,2, Hirokuni Asamizu^1,3, Kentaro Tamura^1,3, Chiaki Kudou^1,4, Johji Nishio^1,5, Kazutoshi Kojima^1,2, Toshiyuki Ohno^1,6, Hajime Okumura^1,2 (FUPET¹, AIST², ROHM³, Panasonic⁴, Toshiba⁵, Hitachi⁶)

Keywords:SiC,エピタキシャル成長,積層欠陥