[17a-A17-1~13] 15.6 IV-group-based compounds

[17a-A17-9] Reduction of surface defects of epitaxial layer grown on 2°-off Si-face 4H-SiC

^○Hirokuni Asamizu^1,2, Chiaki Kudou^1,3, Sachiko Ito^1,4, Keiko Masumoto^1,4, Johji Nisio^1,5, Kentaro Tamura^1,2, Kojima Kazutoshi^1,4, Toshiyuki Ohno^1,6 (FUPET¹, Rohm Co., Ltd.², Panasonic Corp.³, AIST⁴, Toshiba Corp.⁵, Hitachi Ltd.⁶)

Keywords:SiC