[17a-A17-1~13] 15.6 IV-group-based compounds

[17a-A17-10] Uniformity improvement in carrier concentration on 150 mm diameter C-face epitaxy of 4H-SiC

^○Johji Nishio^1,2, Hirokuni Asamizu^1,3, Chiaki Kudou^1,4, Sachiko Ito⁵, Keiko Masumoto^1,5, Kentaro Tamura^1,3, Kazutoshi Kojima^1,5, Toshiyuki Ohno^1,6 (FUPET¹, Toshiba², ROHM³, Panasonic⁴, AIST⁵, Hitachi⁶)

Keywords:SiC,epitaxy,均一性