[17a-A17-1~13] 15.6 IV-group-based compounds

[17a-A17-11] Effective C/Si ratio changes in SiC epitaxial film growth using a horizontal CVD

^○Chiaki Kudou^1,2, Keiko Masumoto^1,5, Hirokuni Asamizu^1,3, Kentaro Tamura^1,3, Johji Nishio^1,4, Kazutoshi Kojima^1,5, Toshiyuki Ohno^1,6 (FUPET¹, Panasonic², ROHM³, Toshiba⁴, AIST⁵, Hitachi⁶)

Keywords:炭化珪素,エピタキシャル成長