The 75th JSAP Autumn Meeting, 2014

Presentation information

Oral presentation

15. Crystal Engineering » 15.6 IV-group-based compounds

[18p-A17-1~12] 15.6 IV-group-based compounds

Thu. Sep 18, 2014 2:00 PM - 5:15 PM A17 (E308)

2:00 PM - 2:15 PM

[18p-A17-1] Interface reaction analysis of La2O3/SiN upon SiC substrate by ATR-FTIR

Yiming Lei1, Shu Munekiyo1, Kuniyuki Kakushima2, Takamasa Kawanago2, Yoshinori Kataoka2, Akira Nishiyama2, Nobuyuki Sugii2, Hitoshi Wakabayash2, Kazuo Tsutsui2, Satoshi Yamakawa3, Hiroshi Iwai1, Masayuki Huruhashi3, Naruhisa Miura3, Kenji Natori1 (Tokyo Tech. FRC1, Tokyo Tech. IGSSE2, Mitsubishi Electric Corp.3)

Keywords:SiC,La-silicate