DLTS Study of SiC-MOSFET Interface Traps Following Oxidation After Nitridation

Junichi Hasegawa

Presentation information

Oral presentation

15. Crystal Engineering » 15.6 IV-group-based compounds

[18p-A17-1~12] 15.6 IV-group-based compounds

Thu. Sep 18, 2014 2:00 PM - 5:15 PM A17 (E308)

3:30 PM - 3:45 PM

△ [18p-A17-7] DLTS Study of SiC-MOSFET Interface Traps Following Oxidation After Nitridation

^○Junichi Hasegawa¹, Takeru Suto¹, Takayuki Iwasaki¹, Tetsuo Kodera¹, Masayuki Furuhashi², Munetaka Noguchi², Shuhei Nakata², Tadashi Nishimura¹, Mutsuko Hatano¹ (Tokyo Tech Univ.¹, Mitsubishi Electric Corp.²)

Keywords:DLTS,SiC-MOSFET,酸化

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