The 75th JSAP Autumn Meeting, 2014

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Oral presentation

15. Crystal Engineering » 15.6 IV-group-based compounds

[17p-A17-1~14] 15.6 IV-group-based compounds

Wed. Sep 17, 2014 2:00 PM - 6:00 PM A17 (E308)

4:00 PM - 4:15 PM

[17p-A17-8] Interface properties of 4H-SiC MOS fabricated on the C-face in NF3-added O2 ambient

○Kohei Hanasato1, Takashi Hasunuma1, Kikuo Ymabe1 (Univ. of Tsukuba1)

Keywords:SiC,熱酸化