The 75th JSAP Autumn Meeting, 2014

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Oral presentation

15. Crystal Engineering » 15.6 IV-group-based compounds

[17a-A17-1~13] 15.6 IV-group-based compounds

Wed. Sep 17, 2014 9:00 AM - 12:30 PM A17 (E308)

10:00 AM - 10:15 AM

[17a-A17-5] Epitaxial growth on 4H-SiC substrates grown by solution growth technique

○Akinori Seki1, Katsunori Danno1, Hironori Daikoku1, Takayuki Shirai1, Kazuaki Satoh1, Takeshi Bessho1 (Toyota Motor Corp.1)

Keywords:半導体,ＳｉＣ