The 75th JSAP Autumn Meeting, 2014

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Oral presentation

15. Crystal Engineering » 15.6 IV-group-based compounds

[18p-A17-1~12] 15.6 IV-group-based compounds

Thu. Sep 18, 2014 2:00 PM - 5:15 PM A17 (E308)

2:45 PM - 3:00 PM

[18p-A17-4] Nitrogen doping level in nitrided 4H-SiC MOS structures studied by electron spin resonance

○Takahide Umeda1, Yoshihiro Sato1, Yuuki Sakuma2, Ryouji Kosugi2 (Univ. of Tsukuba1, AIST2)

Keywords:4H-SiC,MOS界面,窒素