The 75th JSAP Autumn Meeting, 2014

Presentation information

Oral presentation

15. Crystal Engineering » 15.6 IV-group-based compounds

[17p-A17-1~14] 15.6 IV-group-based compounds

Wed. Sep 17, 2014 2:00 PM - 6:00 PM A17 (E308)

3:30 PM - 3:45 PM

[17p-A17-6] Evaluation method of the gate dielectric reliability under negative gate bias with the ultraviolet irradiation for supplying hole to SiC MOS capacitors

Teruyuki Ohashi1, Ryosuke Iijima1, Kazuto Takao1 (Corporate R&D Center, Toshiba Corp.1)

Keywords:SiC,MOSFET,絶縁膜